STD95N4LF3 STMicroelectronics, STD95N4LF3 Datasheet - Page 7

• Manufacturer Part Number: STD95N4LF3
• Description: MOSFET N-CH 40V 80A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD95N4LF3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.006 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 150 S
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 80 A
• Power Dissipation: 110000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 11 ns
• Rise Time: 45 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8776-2

STD95N4LF3
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
(norm)
V
GS(th)
V
(V)
1.6
1.2
1.4
1.0
0.8
0.6
0.4
0.2
12
10
GS
2
8
6
4
0
0
0
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
-50
10
V
V
I
DD
GS
D
0
=80A
20
=20V
=10V
30
50
40
100
50
150
Q
Doc ID 15372 Rev 2
g
(nC)
AM01533v1
AM01535v1
T
J
(°C)
Figure 11. Normalized on resistance vs
(norm)
R
5000
4500
4000
3500
3000
2500
2000
1500
1000
DS(on)
500
(pF)
1.2
1.6
1.4
1.0
0.8
0.6
0.4
0.2
C
0
0
0
Capacitance variations
temperature
-50
5
Crss
10
0
f=1MHz
V
V
15
DS
GS
Electrical characteristics
=25V
=0
20
50
25
100
30
Coss
35
150
Ciss
V
AM01536v1
AM01534v1
DS
T
(V)
J
(°C)
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