IRF7410GPBF International Rectifier, IRF7410GPBF Datasheet

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IRF7410GPBF

Manufacturer Part Number
IRF7410GPBF
Description
MOSFET P-CH 12V 16A SO-8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7410GTRPBF.pdf (9 pages)

Specifications of IRF7410GPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 16A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
90nC @ 4.5V
Input Capacitance (ciss) @ Vds
8676pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
-16A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
7mohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
7 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 16 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
91 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
l
l
l
l
l
l
Thermal Resistance
These P-Channel HEXFET
International Rectifier utilize advanced processing
techniques to achieve the extremely low on-resistance
per silicon area. This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications..
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
Description
www.irf.com
R
V
I
I
I
P
P
V
T
D
D
DM
J,
DS
D
D
GS
θJA
@ T
@ T
Ultra Low On-Resistance
P-Channel MOSFET
Surface Mount
Available in Tape & Reel
Lead-Free
Halogen-Free
@T
@T
T
STG
A
A
A
A
= 70°C
= 25°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain- Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
®
Power MOSFETs from
Parameter
Parameter
ƒ
ƒ
GS
GS
ƒ
@ -4.5V
@ -4.5V
G
S
S
S
V
-12V
DSS
1
2
3
4
Top View
IRF7410GPbF
HEXFET Power MOSFET
13mΩ@V
7mΩ@V
9mΩ@V
8
6
5
7
-55 to +150
R
Max.
Max.
DS(on)
50
D
D
D
D
-12
-16
-13
-65
2.5
1.6
A
20
±8
GS
GS
GS
max
= -4.5V
= -2.5V
= -1.8V
SO-8
-
-
13.6A
11.5A
-
16A
mW/°C
07/10/09
Units
Units
I
°C/W
D
W
°C
V
A
V
1

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IRF7410GPBF Summary of contents

Page 1

... Power Dissipation 70°C Power Dissipation D A Linear Derating Factor V Gate-to-Source Voltage Junction and Storage Temperature Range J, STG Thermal Resistance Parameter R Maximum Junction-to-Ambient θJA www.irf.com IRF7410GPbF V DSS -12V Top View @ -4. -4.5V GS ƒ ƒ ƒ HEXFET Power MOSFET R max I DS(on) D 7mΩ@ ...

Page 2

Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V /∆T Gate Threshold Voltage Coefficient ...

Page 3

PULSE WIDTH Tj = 25°C 0.1 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 25° 150° ...

Page 4

0V MHZ C iss = SHORTED 12000 C rss = oss = 10000 Ciss 8000 6000 4000 ...

Page 5

T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE 0.1 (THERMAL RESPONSE) ...

Page 6

-16A 0.004 0.002 0.0 2.0 4.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Charge Fig 14a. Basic Gate Charge ...

Page 7

Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com 700 600 500 -250µA 400 300 200 100 0 0.0001 0.0010 ...

Page 8

SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

Page 9

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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