IRF7410GPBF International Rectifier, IRF7410GPBF Datasheet - Page 6

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IRF7410GPBF

Manufacturer Part Number
IRF7410GPBF
Description
MOSFET P-CH 12V 16A SO-8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7410GPBF

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7 mOhm @ 16A, 4.5V
Drain To Source Voltage (vdss)
12V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
900mV @ 250µA
Gate Charge (qg) @ Vgs
90nC @ 4.5V
Input Capacitance (ciss) @ Vds
8676pF @ 10V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
P Channel
Continuous Drain Current Id
-16A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
7mohm
Rds(on) Test Voltage Vgs
-4.5V
Rohs Compliant
Yes
Resistance Drain-source Rds (on)
7 mOhms
Drain-source Breakdown Voltage
- 12 V
Gate-source Breakdown Voltage
8 V
Continuous Drain Current
- 16 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
91 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
6
0.010
0.008
0.006
0.004
0.002
Fig 14a. Basic Gate Charge Waveform
Fig 12. Typical On-Resistance Vs.
V
G
0.0
Q
GS
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
2.0
Q
Charge
Q
GD
G
4.0
I D = -16A
6.0
8.0
0.015
0.005
0.02
0.01
Fig 14b. Gate Charge Test Circuit
Fig 13. Typical On-Resistance Vs.
0
12V
0.0
V
GS
Same Type as D.U.T.
10.0 20.0 30.0 40.0 50.0 60.0 70.0
Current Regulator
.2µF
Drain Current
50KΩ
-3mA
-ID , Drain Current ( A )
Current Sampling Resistors
.3µF
V GS = -1.8V
I
G
D.U.T.
V GS = -4.5V
I
D
www.irf.com
V GS = -2.5V
+
-
V
DS

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