IRF7410GPBF International Rectifier, IRF7410GPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7410GPBF
• Description: MOSFET P-CH 12V 16A SO-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7410GPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 8676pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -16A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 16 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 91 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
V
∆V
R
V
∆V
gfs
I
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Source-Drain Ratings and Characteristics
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
(BR)DSS
GS(th)
SD
DS(on)
g
gs
gd
iss
oss
rss
rr
2
Symbol
Symbol
Repetitive rating; pulse width limited by
Pulse width ≤ 400µs; duty cycle ≤ 2%.
(BR)DSS
GS(th)
max. junction temperature.
/∆T
/∆T
J
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Parameter
™
ƒ
Surface mounted on 1 in square Cu board, t ≤ 10sec.
Min.
Min.
–––
–––
–––
–––
-0.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-12
55
0.006
Typ. Max. Units
8676
2344
1604
Typ. Max. Units
-3.09
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
271
200
–––
–––
–––
134
91
18
25
13
12
97
-100
–––
–––
-0.9
–––
–––
-1.0
100
–––
407
300
–––
–––
–––
-2.5
-1.2
145
201
-25
-65
13
20
18
7
9
mV/°C
V/°C
mΩ
µA
nA
nC
µC
pF
ns
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0 MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
J
J
GS
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
D
G
GS
DS
= -16A
=-1.0A
= 25°C, I
= 25°C
= 6Ω
= 6Ω
= V
= -10V, I
= -9.6V, V
= -9.6V, V
=-9.6V
= -10V
= 0V, I
= -4.5V, I
= -2.5V, I
= -1.8V, I
= -8V
= 8V
= -4.5V
= -6V V
= 0V
GS
d
, I
Conditions
Conditions
D
S
D
d
= -250µA
D
GS
= -2.5A, V
D
D
D
= -250µA
GS
GS
= -16A
= -16A
= -13.6A
= -11.5A
= -4.5V
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d
= 0V
= 0V, T
G
I
D
F
= -2.5A
= -1mA
d
GS
d
d
J
= 70°C
= 0V
D
S
d