IRF7410GPBF International Rectifier, IRF7410GPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7410GPBF
• Description: MOSFET P-CH 12V 16A SO-8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7410GPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 16A, 4.5V
• Drain To Source Voltage (vdss): 12V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 90nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 8676pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: P Channel
• Continuous Drain Current Id: -16A
• Drain Source Voltage Vds: -12V
• On Resistance Rds(on): 7mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Resistance Drain-source Rds (on): 7 mOhms
• Drain-source Breakdown Voltage: - 12 V
• Gate-source Breakdown Voltage: 8 V
• Continuous Drain Current: - 16 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 91 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 3. Typical Transfer Characteristics
0.01
Fig 1. Typical Output Characteristics
100
100
0.1
0.1
10
10
1
1
0.2
0.1
T J = 150°C
0.4
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
0.6
≤ 60µs PULSE WIDTH
Tj = 25°C
1
0.8
-1.0V
V DS = -10V
≤60µs PULSE WIDTH
1
T J = 25°C
1.2
10
TOP
BOTTOM
1.4
1.6
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
100
1.8
100
10
2.0
1.5
1.0
0.5
0.0
1
0.1
Fig 4. Normalized On-Resistance
-60 -40 -20
Fig 2. Typical Output Characteristics
I =
D
-16A
V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
Vs. Temperature
0
1
-1.0V
20 40 60 80 100 120 140 160
≤ 60µs PULSE WIDTH
Tj = 150°C
10
TOP
BOTTOM
V
GS
°
VGS
-7.0V
-5.0V
-4.5V
-2.5V
-1.8V
-1.5V
-1.2V
-1.0V
=
-4.5V
3
100