IXTP08N100P IXYS, IXTP08N100P Datasheet

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IXTP08N100P

Manufacturer Part Number
IXTP08N100P
Description
MOSFET N-CH 1000V 800MA TO-220
Manufacturer
IXYS
Series
Polar™r
Datasheet

Specifications of IXTP08N100P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
800mA
Vgs(th) (max) @ Id
4V @ 50µA
Gate Charge (qg) @ Vgs
11.3nC @ 10V
Input Capacitance (ciss) @ Vds
240pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
20 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.8 A
Power Dissipation
42 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1000
Id(cont), Tc=25°c, (a)
0.8
Rds(on), Max, Tj=25°c, (?)
20
Ciss, Typ, (pf)
240
Qg, Typ, (nc)
11.3
Trr, Typ, (ns)
750
Pd, (w)
42
Rthjc, Max, (k/w)
3.0
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Polar
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2009 IXYS CORPORATION, All Rights Reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, Unless Otherwise Specified)
TM
Test Conditions
T
T
Continuous
Transient
T
T
T
T
I
T
1.6mm (0.062) from Case for 10s
Plastic Body for 10s
Mounting Torque
TO-263
TO-220
TO-252
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
GS
DS
GS
DS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, Pulse Width Limited by T
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 10V, I
DM
GS
, V
DSS
, I
DD
D
, V
D
D
= 250μA
≤ V
= 50μA
= 0.5 • I
GS
DS
= 0V
DSS
= 0V
, T
(TO-220)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTA08N100P
IXTP08N100P
IXTY08N100P
Characteristic Values
1000
Min.
-55 ... +150
-55 ... +150
2.0
Maximum Ratings
1.13 / 10
1000
1000
0.35
2.50
3.00
±20
±30
150
300
260
0.8
1.5
0.8
80
10
42
Typ.
17
Nm/lb.in.
±50
100 μA
Max.
4.0
20
3
V/ns
mJ
nA
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
g
TO-263 (IXTA)
TO-220 (IXTP)
TO-252 (IXTY)
G = Gate
S = Source
Features
Advantages
Applications
International Standard Packages
Avalanche Rated
Low Package Inductance
Switched-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Laser Drivers
AC and DC Motor Drives
Robotics and Servo Controls
V
I
R
Easy to Mount
Space Savings
High Power Density
D25
DS(on)
DSS
G
D
G
G
S
S
S
= 1000V
= 0.8A
≤ ≤ ≤ ≤ ≤ 20Ω Ω Ω Ω Ω
D
TAB = Drain
(TAB)
= Drain
(TAB)
(TAB)
DS99865C(04/09)

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IXTP08N100P Summary of contents

Page 1

... ±20V GSS DSS DS DSS 10V 0.5 • I DS(on © 2009 IXYS CORPORATION, All Rights Reserved IXTA08N100P IXTP08N100P IXTY08N100P Maximum Ratings 1000 = 1MΩ 1000 GS ±20 ±30 0.8 1.5 JM 0.8 80 ≤ 150° -55 ... +150 150 -55 ... +150 300 260 1. 2.50 3.00 0.35 Characteristic Values Min ...

Page 2

... D25 6.7 0.50 Characteristic Values (T = 25°C, Unless Otherwise Specified) J Min. Typ. JM 750 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA08N100P IXTP08N100P IXTY08N100P TO-220 (IXTP) Outline Max Pins Gate nC 3.0 °C/W °C/W Max. 0.8 A 2 TO-252 (IXTY) Outline ...

Page 3

... IXYS CORPORATION, All Rights Reserved V = 10V 10V 0.4A Value 125º 25ºC J 0.7 0.8 0.9 1.0 1.1 1.2 IXTA08N100P IXTP08N100P Fig. 2. Extended Output Characteristics @ 25ºC 1 10V GS 7V 1.0 0.8 6V 0.6 0.4 5V 0.2 0 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3 10V GS 2 ...

Page 4

... IXYS Reserves The Right to Change Limits, Test Conditions, and Dimensions. = 125ºC 25ºC - 40ºC 5.0 5.5 6.0 6 25ºC J 0.7 0.8 0.9 10.0 C iss C oss C rss IXTA08N100P IXTP08N100P Fig. 8. Transconductance 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 0.1 0.2 0.3 0.4 0 Amperes D Fig ...

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