STD5NM60-1 STMicroelectronics, STD5NM60-1 Datasheet - Page 3

• Manufacturer Part Number: STD5NM60-1
• Description: MOSFET N-CH 650V 5A IPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD5NM60-1

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1 Ohm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 96W
• Mounting Type: Through Hole
• Package / Case: IPak, TO-251, DPak, VPak (3 straight leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP8NM60, STD5NM60, STB8NM60
2
Electrical characteristics
(T
Table 4.
Table 5.
1. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
C
I
I
increases from 0 to 80% V
DS(on)
C
C
GS(th)
Q
Q
DSS
GSS
Q
g
oss
oss eq.
rss
iss
fs
gs
gd
g
(1)
= 25 °C unless otherwise specified)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
I
V
V
V
V
V
(see Figure 12)
I
V
V
V
V
V
D
D
GS
GS
GS
DS
DS
DD
DS
DS
GS
DS
GS
= 2.5 A
= 250 µA, V
=0
=0, V
= 10 V, I
= 400 V, I
= I
= 25 V, f=1 MHz,
=10 V
= max rating,
= max rating @125 °C
= ±20 V
= V
Test conditions
Test conditions
D(on)
GS
DS
, I
x R
D
=0 to 480 V
D
D
= 2.5 A
= 250 µA
GS
= 5 A
DS(on)max
= 0
,
Min.
Min.
Electrical characteristics
600
3
Typ.
Typ.
400
100
2.4
10
50
13
0.9
5
6
4
oss
Max.
Max.
±
when V
18
100
10
1
5
1
DS
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
Ω
V
V
S
3/18