STB16NS25T4 STMicroelectronics, STB16NS25T4 Datasheet - Page 2

• Manufacturer Part Number: STB16NS25T4
• Description: MOSFET N-CH 250V 16A D2PAK
• Manufacturer: STMicroelectronics
• Series: MESH OVERLAY™r

Specifications of STB16NS25T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 280 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 1270pF @ 25V
• Power - Max: 140W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB16NS25
THERMAL DATA
AVALANCHE CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
2/9
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
Symbol
R
V
(BR)DSS
g
I
C
I
DS(on)
C
E
GS(th)
C
fs
I
DSS
GSS
AR
T
oss
AS
iss
rss
(1)
l
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
Single Pulse Avalanche Energy
(starting T
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
j
DS
= 25 °C, I
= 0)
GS
= 0)
D
= I
j
max)
AR
Parameter
, V
DD
I
V
V
V
V
V
V
I
D
D
V
= 28 V)
DS
DS
GS
DS
GS
DS
DS
= 8 A
= 250 µA, V
= Max Rating
= Max Rating, T
= V
> I
= ± 20 V
= 10V, I
= 25V, f = 1 MHz, V
D(on)
Test Conditions
Test Conditions
Test Conditions
GS
, I
x R
D
D
= 8 A
GS
= 250µA
DS(on)max,
= 0
C
= 125 °C
GS
= 0
Min.
Min.
Min.
250
14
2
62.5
300
0.9
Max Value
1270
200
Typ.
Typ.
0.23
Typ.
190
16
15
75
3
Max.
±100
Max.
Max.
0.28
50
1
4
°C/W
°C/W
Unit
Unit
Unit
Unit
mJ
°C
µA
µA
nA
pF
pF
pF
A
V
V
S