STB6NK60ZT4 STMicroelectronics, STB6NK60ZT4 Datasheet - Page 3

• Manufacturer Part Number: STB6NK60ZT4
• Description: MOSFET N-CH 600V 6A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB6NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 905pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 1.2 Ohms
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
V
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-amb max
Symbol
Symbol
Symbol
dv/dt
ESD(G-S)
I
DM
P
V
V
V
SD
E
T
I
TOT
I
I
T
T
AR
ISO
GS
DS
stg
AS
D
D
j
l
(2)
(3)
≤ 6 A, di/dt ≤ 200 A/µs, V
Maximum lead temperature for soldering
purpose
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
G-S ESD (HBM C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (DC)
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
J
= 25 °C, I
DD
Parameter
Parameter
Parameter
= 80% V
C
D
= I
= 25 °C
GS
AR
= 0)
, V
(BR)DSS
DD
C
C
= 50 V)
= 25 °C
= 100 °C
TO-220/D²/I²PAK TO-220FP
TO-220/D²/I²PAK TO-220FP
1.14
0.88
110
3.8
24
--
6
-55 to 150
Value
Value
Value
3500
62.5
± 30
300
600
210
4.5
6
Electrical ratings
3.8
24
2500
0.24
6
4.2
30
(1)
(1)
(1)
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
mJ
°C
°C
W
V
A
V
A
A
A
V
V
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