IXFP8N50PM IXYS, IXFP8N50PM Datasheet - Page 2

• Manufacturer Part Number: IXFP8N50PM
• Description: MOSFET N-CH 500V 4.4A TO-220
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFP8N50PM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 4.4A
• Vgs(th) (max) @ Id: 5.5V @ 1mA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 1050pF @ 25V
• Power - Max: 42W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.8 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4.4 A
• Power Dissipation: 42 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 4.4
• Rds(on), Max, Tj=25°c, (?): 0.8
• Ciss, Typ, (pf): 1050
• Qg, Typ, (nc): 20
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 42
• Rthjc, Max, (ºc/w): 3
• Package Style: TO-220 Overmolded
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
S
SM
RM
d(on)
r
d(off)
f
rr
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
fs
SD
iss
oss
rss
thJS
g(on)
gs
gd
RM
one or moreof the following U.S. patents:
The product presented herein is under development. The Technical Specifications offered
are derived from data gathered during objective characterizations of preliminary engineer-
ing lots; but also may yet contain some information supplied during a pre-production
design evaluation. IXYS reserves the right to change limits, test conditions, and dimen-
sions without notice.
Test Conditions
V
V
V
R
V
Test Conditions
V
Repetitive
I
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
I
-di/dt = 100 A/µs
F
F
DS
GS
GS
GS
GS
G
= I
= 8 A, V
PRELIMINARY TECHNICAL INFORMATION
= 10 V; I
= 18 Ω (External)
= 10 V, V
= 0 V, V
= 10 V, V
= 0 V
S
, V
GS
GS
= 0 V,
D
DS
=0V, V
DS
= 4 A
DS
= 25 V, f = 1 MHz
= 0.5 V
= 0.5 V
4,850,072
4,881,106
R
=100V
DSS
DSS
, I
4,931,844
5,017,508
5,034,796
, I
D
D
= 4 A
= 8 A
(T
(T
J
J
= 25° C, unless otherwise specified)
5,049,961
5,063,307
5,187,117
= 25° C unless otherwise specified)
Min.
Min.
5,237,481
5,381,025
5,486,715
5
Characteristic Values
Characteristic Values
1050
Typ.
Typ.
0.25
120
12
22
28
65
23
20
6,162,665
6,259,123 B1
6,306,728 B1
8
7
7
2
Max.
Max.
3.0 ° C/W
200 ns
1.5
14
8
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
A
S
A
V
A
ISOLATED TO-220 (IXTP...M)
6,683,344
6,710,405B2
6,710,463
Terminals: 1 - Gate
1 2
6,727,585
6,759,692
6,771,478 B2
IXFP 8N50PM
3
2 - Drain (Collector)
3 - Source (Emitter)