STB60N55F3 STMicroelectronics, STB60N55F3 Datasheet - Page 3

• Manufacturer Part Number: STB60N55F3
• Description: MOSFET N-CH 55V 80A D2PAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STB60N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 110W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 8.5 m Ohms
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 56 A to 80 A
• Power Dissipation: 110 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 80A
• Drain Source Voltage Vds: 55V
• On Resistance Rds(on): 8.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5954-2

STx60N55F3
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
3. Starting Tj=25°C, Id=32 A, Vdd= 25 V
Table 3.
1. When mounted on FR-4 board of 1inch², 2oz Cu
Rthj-pcb
Symbol
Rthj-case
dv/dt
E
Symbol
I
DM
P
V
SD
Rthj-a
V
V
AS
T
TOT
I
I
T
ISO
GS
DS
stg
D
D
T
j
< 80 A, di/dt < 300A/µs, V
(1)
(3)
l
(2)
(1)
Absolute maximum ratings
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1s;T
Operating junction temperature
Storage temperature
Thermal resistance
Thermal resistance junction-
case max
Thermal resistance junction-
pcb max
Thermal resistance junction-
ambient max
Maximum lead temperature
for soldering purpose
Parameter
DD
< V
Parameter
Doc ID 13242 Rev 4
C
(BR)DSS.
= 25°C
GS
=0)
Tj < Tjmax
C
C
= 25°C
= 100°C
DPAK
C
50
=25°C)
I²PAK
IPAK
100
275
1.36
D²PAK TO-220 TO-220FP
DPAK/D²PAK
35
Value
IPAK/I²PAK
TO-220
0.73
320
110
80
56
-55 to 175
Value
± 20
390
55
11
62.5
300
Electrical ratings
TO-220FP
2500
168
0.2
42
30
30
5
°C/W
°C/W
°C/W
W/°C
V/ns
Unit
Unit
mJ
°C
°C
W
V
V
A
A
A
V
3/20