IXTY1R4N100P IXYS, IXTY1R4N100P Datasheet

IXTY1R4N100P

Manufacturer Part Number

IXTY1R4N100P

Description

MOSFET N-CH 1000V 1.4A TO-252

Manufacturer

IXYS

Series

Polar™r

Datasheet

1.IXTP1R4N100P.pdf (4 pages)

Specifications of IXTY1R4N100P

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

11 Ohm @ 500mA, 10V

Drain To Source Voltage (vdss)

1000V (1kV)

Current - Continuous Drain (id) @ 25° C

1.4A

Vgs(th) (max) @ Id

4.5V @ 50µA

Gate Charge (qg) @ Vgs

17.8nC @ 10V

Input Capacitance (ciss) @ Vds

450pF @ 25V

Power - Max

63W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

11 Ohms

Drain-source Breakdown Voltage

1000 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

1.4 A

Power Dissipation

63 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

1000

Id(cont), Tc=25°c, (a)

1.4

Rds(on), Max, Tj=25°c, (?)

Ciss, Typ, (pf)

450

Qg, Typ, (nc)

17.8

Trr, Typ, (ns)

750

Pd, (w)

Rthjc, Max, (k/w)

2.0

Package Style

TO-252

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Polar

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Symbol

dV/dt

Weight

Symbol

D25

GSS

DSS

stg

SOLD

DSS

DGR

GSS

GSM

GS(th)

DS(on)

DSS

= 25°C, unless otherwise specified)

Test Conditions

Continuous

Transient

1.6mm (0.062) from case for 10s

Plastic body for 10s

Mounting torque

TO-263

TO-220

TO-252

Test Conditions

= 25°C to 150°C

= 25°C to 150°C, R

= 25°C

= 25°C, pulse width limited by T

= 25°C

≤ I

= 25°C

= 0V, I

= V

= ±20V, V

= V

= 0V

= 10V, I

, V

DSS

, I

= 250μA

≤ V

= 50μA

= 0.5 • I

DSS

= 0V

, T

(TO-220)

D25

≤ 150°C

, Note 1

= 1MΩ

= 125°C

IXTA1R4N100P

IXTP1R4N100P

IXTY1R4N100P

-55 ... +150

Maximum Ratings

Characteristic Values

1.13 / 10

1000

Min.

2.5

1000

0.35

2.50

3.00

±20

±30

100

150

300

260

1.4

3.0

1.4

Typ.

Nm/lb.in.

±50

150 μA

4.5

Max.

5 μA

V/ns

°C

TO-263 (IXTA)

TO-220 (IXTP)

TO-252 (IXTY)

G = Gate

S = Source

Features

Advantages

Applications:

D25

International standard packages

Unclamped Inductive Switching

(UIS) rated

Low package inductance

- easy to drive and to protect

Switched-mode and resonant-mode

power supplies

DC-DC Converters

Laser Drivers

AC and DC motor controls

Robotics and servo controls

Easy to mount

Space savings

High power density

DS(on)

DSS

= 1000V

= 1.4A

≤ ≤ ≤ ≤ ≤ 11Ω Ω Ω Ω Ω

D = Drain

TAB = Drain

(TAB)

DS99737A(4/08)

(TAB)

Related parts for IXTY1R4N100P

IXTY1R4N100P Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2008 IXYS CORPORATION, All rights reserved IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P Maximum Ratings 1000 = 1MΩ 1000 GS ±20 ±30 1.4 3.0 JM 1.4 100 ≤ 150° -55 ... +150 150 -55 ... +150 300 260 1. 2.50 3.00 0.35 Characteristic Values Min ...

Page 2

... DSS D D25 9.9 0.50 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. JM 750 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P TO-220 (IXTP) Outline Max Pins Gate 3 - Source nC 2.0 °C/W °C/W Max. 1 ...

Page 3

... IXYS CORPORATION, All rights reserved V = 10V 10V 0.7A Value 125º 25ºC J 1.2 1.4 1.6 1.8 2.0 2.2 IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P Fig. 2. Extended Output Characteristics @ 25ºC 2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Volts DS Fig Normalized to I DS(on) vs. Junction Temperature 3.0 2.8 ...

Page 4

... T = 25ºC J 0.7 0.75 0.8 0.85 0.9 0.95 10.00 C iss 1.00 C oss 0.10 C rss 0. IXTA1R4N100P IXTP1R4N100P IXTY1R4N100P Fig. 8. Transconductance 2.4 T 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 ...

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