STP6NK90Z STMicroelectronics, STP6NK90Z Datasheet - Page 5

• Manufacturer Part Number: STP6NK90Z
• Description: MOSFET N-CH 900V 5.8A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP6NK90Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2 Ohm @ 2.9A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 5.8A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 60.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 1350pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 5.8 A
• Power Dissipation: 140000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5.8A
• Drain Source Voltage Vds: 900V
• On Resistance Rds(on): 2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3199-5

STP6NK90Z - STP6NK90ZFP - STB6NK90Z - STW7NK90Z
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq.
(BR)DSS
T
g
t
I
I
increases from 0 to 80% V
DS(on)
C
t
GS(th)
C
C
Q
r(Voff)
d(on)
Q
DSS
GSS
r(off)
fs
Q
T
T
oss eq.
oss
t
t
iss
rss
gs
gd
r
r
c
g
r
(1)
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
Breakdown voltage
Zero gate voltage
Drain current (V
Gate-body leakage
Current (V
Gate threshold voltage
Static drain-source on
resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent output
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Off-voltage rise time
Fall time
Cross-over time
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
.
= 0)
I
V
V
V
V
V
D
GS
GS
DS
DS
DS
V
V
V
V
V
R
(see
V
V
V
R
(see
=1mA, V
GS
GS
DS
DS
DS
DD
G
DD
DD
G
= Max Rating
= Max Rating, T
= V
= ± 20 V
= 10 V, I
= 4.7 Ω, V
= 4.7 Ω, V
= 15v, I
= 25 V, f = 1 MHz,
= 0
=0V, V
= 10 V
= 450 V, I
= 720 V, I
= 720 V, I
Test conditions
Figure
Figure
GS
Test conditions
, I
GS
D
D
DS
D
= 100 µA
20)
22)
= 0
= 2.9 A
= 2.9 A
D
GS
D
D
GS
= 0V to 720V
= 3 A,
= 5.8 A,
= 5.8 A,
= 10 V
= 10 V
C
= 125°C
Electrical characteristics
Min.
Min.
900
3
1350
Typ.
46.5
130
8.5
Typ. Max. Unit
3.75
1.56
26
70
17
45
20
20
25
11
12
20
5
oss
Max.
60.5
when V
± 10
4.5
50
1
2
DS
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
ns
ns
ns
S
V
V
Ω
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