STD10NM60N STMicroelectronics, STD10NM60N Datasheet - Page 7

• Manufacturer Part Number: STD10NM60N
• Description: MOSFET N-CH 600V 8A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD10NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 550 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 19nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 50V
• Power - Max: 70W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 10A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 0.53ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 550 mOhms
• Drain-source Breakdown Voltage: 600 V
• Continuous Drain Current: 10 A
• Power Dissipation: 70 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Gate Charge Qg: 19 nC
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10021-2

STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N
Figure 8.
Figure 10.
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
(norm)
BV
0.99
0.97
1.01
0.95
0.93
V
1.07
1.05
1.03
(V)
(A)
DSS
12
10
GS
I
14
12
10
D
0
6
2
8
4
0
2
8
6
4
0
-50
0
V
DS
Output characteristics
Normalized BV
V
-25
GS
5
=10V
5
0
10
25
V
10
15
DD
I
I
D
D
=480V
=4A
=1mA
50
20
DSS
15
75
vs temperature Figure 11. Static drain-source on resistance
25
100
20
30
V
6V
4V
T
5V
Q
J
GS
Doc ID 15764 Rev 5
(°C)
g
(nC)
AM03955v1
AM03947v1
V
AM03951v1
DS
(V)
Figure 9.
R
1000
DS(on)
100
0.56
0.52
(pF)
0.48
0.44
0.40
(A)
(Ω)
14
12
10
10
I
C
D
2
8
6
4
0
1
0
0.1
0
Transfer characteristics
2
V
2
1
DS
=20V
4
Electrical characteristics
4
10
6
8
6
100
V
GS
10
=10V
8
V
V
DS
GS
AM03948v1
AM03952v1
AM00891v1
I
(V)
D
(V)
Ciss
Coss
(A)
Crss
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