STD2NK100Z STMicroelectronics, STD2NK100Z Datasheet - Page 3
![MOSFET N-CH 1000V 1.85A DPAK](/photos/5/30/53090/497-dpak_to-252_sml.jpg)
STD2NK100Z
Manufacturer Part Number
STD2NK100Z
Description
MOSFET N-CH 1000V 1.85A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP2NK100Z.pdf
(16 pages)
Specifications of STD2NK100Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.85A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
499pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 Ohm @ 10 V
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7964-2
STD2NK100Z
STD2NK100Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD2NK100Z
Manufacturer:
ST
Quantity:
20 000
STD2NK100Z - STP2NK100Z - STU2NK100Z
1
Electrical ratings
Table 2.
1. Pulse width limited by safe operating area
2. I
Table 3.
Table 4.
1. Pulse width limited by Tjmax
2. Starting Tj = 25°C, I
V
Symbol
Symbol
Symbol
R
R
dv/dt
R
E
ESD(G-S)
I
I
SD
DM
P
thj-case
AR
thj-amb
V
thj-pcb
AS
V
T
I
I
TOT
T
T
GS
DS
stg
D
D
l
j
(1)
≤ 1.85 A, di/dt ≤ 200 A/µs, V
(1)
(2)
(2)
Thermal resistance junction-case max
Thermal resistance junction-pcb minimum footprint
Thermal resistance junction-amb max
Maximum lead temperature for soldering purpose
Avalanche current, repetitive or not-repetitive
Single pulse avalanche energy
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
G-S ESD (HBM C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Operating junction temperature
Storage temperature
Absolute maximum ratings
Thermal data
Avalanche data
D
= I
AR
, V
DD
= 50V
Parameter
Parameter
DD
Parameter
C
= 25 °C
= 80% V
GS
= 0)
(BR)DSS
C
C
= 25 °C
= 100 °C
TO-220
62.5
--
-55 to 150
Value
Value
Value
1000
3000
± 30
1.85
1.16
0.56
1.79
1.85
300
170
IPAK
7.4
2.5
70
--
Electrical ratings
100
DPAK
50
W/°C
°C/W
°C/W
°C/W
Unit
V/ns
Unit
Unit
°C
°C
mJ
W
V
V
A
A
A
V
A
3/16