STD2NK100Z STMicroelectronics, STD2NK100Z Datasheet - Page 9
![MOSFET N-CH 1000V 1.85A DPAK](/photos/5/30/53090/497-dpak_to-252_sml.jpg)
STD2NK100Z
Manufacturer Part Number
STD2NK100Z
Description
MOSFET N-CH 1000V 1.85A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP2NK100Z.pdf
(16 pages)
Specifications of STD2NK100Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.85A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
499pF @ 25V
Power - Max
70W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 Ohm @ 10 V
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2 A
Power Dissipation
70000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-7964-2
STD2NK100Z
STD2NK100Z
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD2NK100Z
Manufacturer:
ST
Quantity:
20 000
STD2NK100Z - STP2NK100Z - STU2NK100Z
3
Figure 16. Switching times test circuit for
Figure 18. Test circuit for inductive load
Figure 20. Unclamped inductive waveform
resistive load
switching and diode recovery times
Test circuits
Figure 17. Gate charge test circuit
Figure 19. Unclamped inductive load test
Figure 21. Switching time waveform
circuit
Test circuits
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