STF60N55F3 STMicroelectronics, STF60N55F3 Datasheet - Page 9

• Manufacturer Part Number: STF60N55F3
• Description: MOSFET N-CH 55V 42A TO-220FP
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STF60N55F3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 8.5 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 2200pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0085 Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 42 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Fall Time: 11.5 ns
• Minimum Operating Temperature: - 55 C
• Rise Time: 50 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STx60N55F3
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Figure 15. Switching times test circuit for
Figure 17. Test circuit for inductive load
Figure 19. Unclamped inductive waveform
Test circuits
resistive load
switching and diode recovery times
Doc ID 13242 Rev 4
Figure 16. Gate charge test circuit
Figure 18. Unclamped inductive load test
Figure 20. Switching time waveform
circuit
Test circuits
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