STF3NK80Z STMicroelectronics, STF3NK80Z Datasheet - Page 6
![MOSFET N-CH 800V 2.5A TO220FP](/photos/5/30/53057/to-220_fp_sml.jpg)
STF3NK80Z
Manufacturer Part Number
STF3NK80Z
Description
MOSFET N-CH 800V 2.5A TO220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Specifications of STF3NK80Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 Ohm @ 1.25A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
2.5A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
485pF @ 25V
Power - Max
25W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
4.5 Ohms
Forward Transconductance Gfs (max / Min)
2.1 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
2.5 A
Power Dissipation
25 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
2.5A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
4.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4342-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STF3NK80Z
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STF3NK80Z
Manufacturer:
SGS
Quantity:
2 892
Part Number:
STF3NK80Z
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
6/18
Table 7.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Table 8.
1. The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
BV
Symbol
Symbol
I
V
SDM
I
I
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
RRM
RRM
I
SD
GSO
Q
Q
SD
t
t
rr
rr
rr
rr
(2)
(1)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown voltage Igs=± 1mA (open drain)
Gate-source Zener diode
Source drain diode
Parameter
Parameter
Doc ID 9565 Rev 6
STD3NK80Z, STD3NK80Z-1, STF3NK80Z, STP3NK80Z
I
I
di/dt = 100 A/µs,
V
(see
I
di/dt = 100 A/µs,
V
(see
SD
SD
SD
DD
DD
= 2.5 A, V
= 2.5 A,
= 2.5 A,
Test conditions
=50 V
=50 V, Tj=150 °C
Test conditions
Figure
Figure
21)
21)
GS
=0
Min
Min.
-
-
-
-
-
30
1600
2100
Typ.
384
474
8.4
8.8
Typ.
-
Max
Max.
2.5
1.6
10
-
Unit
Unit
µC
µC
ns
ns
A
A
V
A
A
V