IXTP12N50PM IXYS, IXTP12N50PM Datasheet - Page 5

• Manufacturer Part Number: IXTP12N50PM
• Description: MOSFET N-CH 500V 6A TO-220
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXTP12N50PM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 10V
• Input Capacitance (ciss) @ Vds: 1830pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.5 Ohms
• Forward Transconductance Gfs (max / Min): 13 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 50 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 6.0
• Rds(on), Max, Tj=25°c, (?): 0.5
• Ciss, Typ, (pf): 1830
• Qg, Typ, (nc): 29
• Trr, Typ, (ns): 400
• Pd, (w): 50
• Rthjc, Max, (k/w): 2.5
• Package Style: TO-220 Overmolded
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTP12N50PM
Fig. 13. Maximum Transient Thermal Impedance
10.00
1.00
0.10
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2008 IXYS CORPORATION, All rights reserved
IXYS REF: T_12N50P(4J)4-14-08-D