STB9NK50ZT4 STMicroelectronics, STB9NK50ZT4 Datasheet

STB9NK50ZT4

Manufacturer Part Number

STB9NK50ZT4

Description

MOSFET N-CH 500V 7.2A D2PAK

Manufacturer

STMicroelectronics

Series

SuperMESH™r

Datasheet

1.STP9NK50ZFP.pdf (13 pages)

Specifications of STB9NK50ZT4

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

850 mOhm @ 3.6A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

7.2A

Vgs(th) (max) @ Id

4.5V @ 100µA

Gate Charge (qg) @ Vgs

32nC @ 10V

Input Capacitance (ciss) @ Vds

910pF @ 25V

Power - Max

110W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.85 Ohms

Forward Transconductance Gfs (max / Min)

5.3 S

Drain-source Breakdown Voltage

500 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

7.2 A

Power Dissipation

110 W

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Company

Part Number

Manufacturer

Quantity

Price

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Part Number:

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Current page: 1 of 13
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DESCRIPTION

The SuperMESH™ series is obtained through an

extreme optimization of ST’s well established strip-

based PowerMESH™ layout. In addition to pushing

on-resistance significantly down, special care is tak-

en to ensure a very good dv/dt capability for the

most demanding applications. Such series comple-

ments ST full range of high voltage MOSFETs in-

cluding revolutionary MDmesh™ products.

APPLICATIONS

ORDERING INFORMATION

June 2004

STP9NK50Z

STP9NK50ZFP

STB9NK50Z

STB9NK50Z-1

TYPICAL R

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

GATE CHARGE MINIMIZED

VERY LOW INTRINSIC CAPACITANCES

VERY GOOD MANUFACTURING

REPEATIBILITY

HIGH CURRENT, HIGH SPEED SWITCHING

IDEAL FOR OFF-LINE POWER SUPPLIES,

ADAPTORS AND PFC

LIGHTING

STP9NK50ZFP

STB9NK50ZT4

STB9NK50Z-1

TYPE

SALES TYPE

STP9NK50Z

N-CHANNEL 500V - 0.72

(on) = 0.72

500 V

DSS

< 0.85

DS(on)

P9NK50ZFP

MARKING

P9NK50Z

B9NK50Z

Zener-Protected SuperMESH™ MOSFET

7.2 A

STP9NK50Z - STP9NK50ZFP

110 W

STB9NK50Z - STB9NK50Z-1

30 W

- 7.2A TO-220/FP/D

PACKAGE

TO-220FP

TO-220

PAK

INTERNAL SCHEMATIC DIAGRAM

TO-220

PAK

TAPE & REEL

PACKAGING

TUBE

PAK/I

TO-220FP

PAK

1 2

PAK

1/13

Related parts for STB9NK50ZT4

STB9NK50ZT4 Summary of contents

Page 1

... MDmesh™ products. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC LIGHTING ORDERING INFORMATION SALES TYPE STP9NK50Z STP9NK50ZFP STB9NK50ZT4 STB9NK50Z-1 June 2004 STP9NK50Z - STP9NK50ZFP STB9NK50Z - STB9NK50Z-1 - 7.2A TO-220/FP/D Zener-Protected SuperMESH™ MOSFET 7.2 A 110 W 7 ...

Page 2

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 ABSOLUTE MAXIMUM RATINGS Symbol V Drain-source Voltage ( Drain-gate Voltage (R DGR V Gate- source Voltage GS I Drain Current (continuous Drain Current (continuous ...

Page 3

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED) ON/OFF Symbol Parameter V Drain-source (BR)DSS Breakdown Voltage I Zero Gate Voltage DSS Drain Current ( Gate-body Leakage GSS Current ( Gate Threshold Voltage GS(th) R Static ...

Page 4

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Safe Operating Area For TO-220/D2PAK/I2PAK Safe Operating Area For TO-220FP Output Characteristics 4/13 Thermal Impedance For TO-220/D2PAK/I2PAK Thermal Impedance For TO-220FP Transfer Characteristics ...

Page 5

Transconductance Gate Charge vs Gate-source Voltage Normalized Gate Threshold Voltage vs Temp. STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Static Drain-source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 5/13 ...

Page 6

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Source-drain Diode Forward Characteristics Maximum Avalanche Energy vs Temperature 6/13 Normalized BVDSS vs Temperature ...

Page 7

Fig. 1: Unclamped Inductive Load Test Circuit Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 Fig. 2: Unclamped Inductive Waveform ...

Page 8

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 DIM. MIN. A 4.40 C 1. 0.49 F 0.61 F1 1.14 F2 1.14 G 4.95 G1 2 13.0 L5 2.65 L6 15.25 L7 6.2 L9 ...

Page 9

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 TO-220FP MECHANICAL DATA mm. DIM. MIN. TYP A 4.4 B 2.5 D 2.5 E 0.45 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9.8 L5 ...

Page 10

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 DIM. MIN. A 4.4 A1 2.49 A2 0.03 B 0.7 B2 1.14 C 0.45 C2 1. 1.27 L3 1.4 M 2.4 R ...

Page 11

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z-1 TO-262 (I mm. DIM. MIN. TYP A 4.40 A1 2.40 b 0.61 b1 1.14 c 0.49 c2 1.23 D 8.95 e 2. 3.50 L2 1.27 2 ...

Page 12

STP9NK50Z - STP9NK50ZFP - STB9NK50Z - STB9NK50Z PAK FOOTPRINT TAPE AND REEL SHIPMENT (suffix ”T4”)* TAPE MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 ...

Page 13

... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied ...

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