STU2NK100Z STMicroelectronics, STU2NK100Z Datasheet - Page 8
![MOSFET N-CH 1000V 1.85A IPAK](/photos/5/60/56062/dpak_369d___01_sml.jpg)
STU2NK100Z
Manufacturer Part Number
STU2NK100Z
Description
MOSFET N-CH 1000V 1.85A IPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP2NK100Z.pdf
(16 pages)
Specifications of STU2NK100Z
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.5 Ohm @ 900mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
1.85A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
16nC @ 10V
Input Capacitance (ciss) @ Vds
499pF @ 25V
Power - Max
70W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak, VPak (3 straight leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
8.5 Ohms
Drain-source Breakdown Voltage
1000 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
1.85 A
Power Dissipation
70 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STU2NK100Z
Manufacturer:
TI
Quantity:
3 306
Electrical characteristics
8/16
Figure 14. Source-drain diode forward
characteristics
Figure 15. Maximum avalanche energy vs
E
STD2NK100Z - STP2NK100Z - STU2NK100Z
AS(
190
180
170
160
150
140
130
120
110
100
mJ)
90
80
70
60
50
40
30
20
10
0
10
temperature
20
30
40
50
60
I
D
=1.85A
70
80
90
100
110
120
AM00056v1
130
140
T
J
(°C)