STP30NF10 STMicroelectronics, STP30NF10 Datasheet - Page 2

• Manufacturer Part Number: STP30NF10
• Description: MOSFET N-CH 100V 35A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP30NF10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 10V
• Input Capacitance (ciss) @ Vds: 1180pF @ 25V
• Power - Max: 115W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 35A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 45mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.038 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 35 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7520-5; STP30NF10

STB30NF10 STP30NF10 STP30NF10FP
THERMAL DATA
ELECTRICAL CHARACTERISTICS (T
OFF
ON
DYNAMIC
2/11
Rthj-case
Rthj-amb
V
Symbol
Symbol
Symbol
R
V
(BR)DSS
(*)
g
I
I
C
DS(on)
C
GS(th)
C
GSS
DSS
fs (*)
T
oss
rss
iss
l
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
case
I
V
V
V
V
V
V
V
D
DS
DS
GS
DS
GS
DS
DS
= 25 °C unless otherwise specified)
= 250 µA, V
= Max Rating
= Max Rating T
= V
= 15 V
= 25V, f = 1 MHz, V
= ± 20 V
= 10 V
Test Conditions
Test Conditions
Test Conditions
GS
GS
I
= 0
D
I
D
= 15 A
I
C
D
= 250 µA
= 125°C
= 15 A
GS
Max
Max
= 0
Min.
Min.
Min.
100
TO-220
D
2
1.30
2
PAK
0.038
1180
62.5
Typ.
Typ.
Typ.
300
180
10
80
3
TO-220FP
5
0.045
Max.
±100
Max.
Max.
10
1
4
°C/W
°C/W
Unit
Unit
Unit
°C
µA
µA
nA
pF
pF
pF
V
V
S