STD11NM60ND STMicroelectronics, STD11NM60ND Datasheet - Page 9

• Manufacturer Part Number: STD11NM60ND
• Description: MOSFET N-CH 600V 10A DPAK
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STD11NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 450 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 30nC @ 10V
• Input Capacitance (ciss) @ Vds: 850pF @ 50V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.45 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 10 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 9 ns
• Rise Time: 7 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8477-2

STD/F/I/P/U11NM60ND
Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
vs temperature
characteristics
Doc ID 14625 Rev 2
Figure 15. Normalized on resistance vs
Figure 17. Normalized B
temperature
Electrical characteristics
VDSS
vs temperature
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