STP4NK80Z STMicroelectronics, STP4NK80Z Datasheet - Page 14

• Manufacturer Part Number: STP4NK80Z
• Description: MOSFET N-CH 800V 3A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r
• Type: Power MOSFETr

Specifications of STP4NK80Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 575pF @ 25V
• Power - Max: 80W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 2.9 S
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 3 A
• Power Dissipation: 80000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3.5Ohm
• Drain-source On-volt: 800V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3192-5

Package mechanical data
14/18
DIM.
(L1)
A1
A2
C2
D1
E1
V2
b4
e1
L2
L4
A
B
C
D
E
H
R
e
L
MIN.
0.03
0.64
0.45
0.48
9.35
2.2
0.9
5.2
6.4
4.4
0.6
0°
6
1
DPAK MECHANICAL DATA
STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1
mm.
TYP
2.28
5.1
4.7
2.8
0.8
0.2
MAX.
0.23
10.1
2.4
1.1
0.9
5.4
0.6
0.6
6.2
6.6
4.6
8°
1
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
0.039
0.023
MIN.
0°
0.200
0.185
0.090
0.110
0.031
0.008
TYP.
inch
0068772-F
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
0.039
8°