STP6NK60ZFP STMicroelectronics, STP6NK60ZFP Datasheet - Page 4
![MOSFET N-CH 600V 6A TO-220FP](/photos/5/30/53057/to-220_fp_sml.jpg)
STP6NK60ZFP
Manufacturer Part Number
STP6NK60ZFP
Description
MOSFET N-CH 600V 6A TO-220FP
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet
1.STP6NK60Z.pdf
(17 pages)
Specifications of STP6NK60ZFP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.2 Ohm @ 3A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
46nC @ 10V
Input Capacitance (ciss) @ Vds
905pF @ 25V
Power - Max
30W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.2 Ohm @ 10 V
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6 A
Power Dissipation
30000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
6A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
1.2ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5956-5
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STP6NK60ZFP
Manufacturer:
ST
Quantity:
5 000
Company:
Part Number:
STP6NK60ZFP
Manufacturer:
ST
Quantity:
10 000
Part Number:
STP6NK60ZFP
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/17
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
C
I
increases from 0 to 80% V
I
C
C
GS(th)
DS(on)
Q
Q
DSS
GSS
fs
Q
oss
oss eq.
rss
iss
gs
gd
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
I
V
V
V
V
V
D
V
V
V
V
V
V
(see Figure 18)
DS
DS
GS
DS
GS
DS
DS
GS
GS
DD
GS
= 1 mA, V
= Max rating
= Max rating, T
= ± 20 V
= V
= 10 V, I
= 8 V
= 25 V, f = 1 MHz,
= 0
= 0, V
= 10 V
= 480 V, I
Test conditions
Test conditions
GS
, I
,
DS
I
D
GS
D
D
= 3 A
= 100 µA
= 0 to 480 V
= 3 A
D
= 0
= 6 A,
C
= 125 °C
Min. Typ. Max.
Min.
600
3
Typ.
3.75
905
115
25
56
33
17
5
6
1
oss
when V
Max. Unit
±10
46
4.5
1.2
50
1
DS
Unit
nC
nC
nC
pF
pF
pF
pF
µA
µA
µA
S
V
V
Ω