STP6NK60ZFP STMicroelectronics, STP6NK60ZFP Datasheet - Page 8

• Manufacturer Part Number: STP6NK60ZFP
• Description: MOSFET N-CH 600V 6A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP6NK60ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 3A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 46nC @ 10V
• Input Capacitance (ciss) @ Vds: 905pF @ 25V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.2 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 6 A
• Power Dissipation: 30000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 1.2ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-5956-5

Electrical characteristics
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Figure 14. Source-drain diode forward
Figure 16. Maximum avalanche energy vs
characteristics
temperature
STB6NK60Z - STB6NK60Z-1 - STP6NK60ZFP - STP6NK60Z
Figure 15. Normalized B
VDSS
vs temperature