STD12NM50N STMicroelectronics, STD12NM50N Datasheet - Page 5
STD12NM50N
Manufacturer Part Number
STD12NM50N
Description
MOSFET N-CH 500V 11A DPAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STD12NM50N.pdf
(19 pages)
Specifications of STD12NM50N
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
380 mOhm @ 5.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
11A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
30nC @ 10V
Input Capacitance (ciss) @ Vds
940pF @ 50V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.38 Ohms
Forward Transconductance Gfs (max / Min)
17 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
6.7 A to 11 A
Power Dissipation
1000 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-5784-2
STD12NM50N
STD12NM50N
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD12NM50N
Manufacturer:
ST
Quantity:
20 000
STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
t
t
I
I
d(on)
d(off)
RRM
RRM
I
SD
Q
Q
t
SD
t
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
I
I
di/dt = 100 A/µs,
(see Figure 18)
I
di/dt = 100 A/µs,
V
(see Figure 18)
V
R
(see Figure 16)
SD
SD
SD
DD
DD
G
=4.7 Ω, V
=11 A, V
=11 A, V
=11 A,
Test conditions
Test conditions
=100 V, Tj=150 °C
=250 V, I
GS
DD
GS
D
= 5.5 A,
=0
=100 V
=10 V
Min
Min
Electrical characteristics
Typ.
Typ.
340
420
15
15
60
14
3.5
20
20
4
Max
Max
1.3
11
44
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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