IXTP14N60P IXYS, IXTP14N60P Datasheet - Page 2

MOSFET N-CH 600V 14A TO-220

IXTP14N60P

Manufacturer Part Number
IXTP14N60P
Description
MOSFET N-CH 600V 14A TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXTP14N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
14A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.55 Ohms
Forward Transconductance Gfs (max / Min)
13 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
14 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
14
Rds(on), Max, Tj=25°c, (?)
0.55
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
36
Trr, Typ, (ns)
500
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTP14N60P
Manufacturer:
IXYS
Quantity:
5 000
Part Number:
IXTP14N60P
Manufacturer:
IXYS
Quantity:
18 000
Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
g(on)
gs
gd
TO-263 (IXTA) Outline
J
J
= 25°C, unless otherwise specified)
= 25°C, unless otherwise specified)
V
V
Resistive Switching Times
V
R
V
(TO-220)
(TO-3P
V
Repetitive, pulse width limited by T
I
I
V
Test Conditions
Test Conditions
F
F
DS
GS
GS
GS
GS
R
G
= I
= 14A, -di/dt = 100A/μs
= 100V, V
= 20V, I
= 0V, V
= 10V, V
= 10Ω (External)
= 10V, V
= 0V
S
, V
GS
= 0V, Note 1
DS
D
DS
DS
GS
= 0.5 • I
= 25V, f = 1MHz
= 0.5 • V
= 0.5 • V
= 0V
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
5,049,961
5,063,307
5,187,117
JM
D25
D25
5,237,481
5,381,025
5,486,715
Min.
7
Min.
Characteristic Values
Characteristic Values
6,162,665
6,259,123 B1
6,306,728 B1
Typ.
2500
0.50
0.25
215
Typ.
13
500
13
23
27
70
26
36
16
12
0.42 °C/W
Max.
6,404,065 B1
6,534,343
6,583,505
Max.
1.5
42
14
°C/W
°C/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
IXTA14N60P IXTP14N60P
6,683,344
6,710,405 B2 6,759,692
6,710,463
TO-3P (IXTQ) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate
6,727,585
6,771,478 B2 7,071,537
3 - Source
7,005,734 B2
7,063,975 B2
IXTQ14N60P
2 - Drain
4 - Drain
7,157,338B2

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