IRF4905SPBF International Rectifier, IRF4905SPBF Datasheet

IRF4905SPBF

Manufacturer Part Number

IRF4905SPBF

Description

MOSFET P-CH 55V 42A D2PAK

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheets

1.IRF4905SPBF.pdf (12 pages)

2.IRF4905SPBF.pdf (4 pages)

Specifications of IRF4905SPBF

Fet Type

MOSFET P-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

20 mOhm @ 42A, 10V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

42A

Vgs(th) (max) @ Id

4V @ 250µA

Gate Charge (qg) @ Vgs

180nC @ 10V

Input Capacitance (ciss) @ Vds

3500pF @ 25V

Power - Max

170W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Channel Type

Current, Drain

-70 A

Gate Charge, Total

120 nC

Package Type

D2Pak

Polarization

P-Channel

Power Dissipation

170 W

Resistance, Drain To Source On

0.020 Ohm

Temperature, Operating, Maximum

+150 °C

Temperature, Operating, Minimum

-55 °C

Time, Turn-off Delay

51 ns

Time, Turn-on Delay

20 ns

Transconductance, Forward

19 S

Voltage, Breakdown, Drain To Source

-55 V

Voltage, Drain To Source

–55 V

Voltage, Forward, Diode

-1.3 V

Voltage, Gate To Source

±20 V

Configuration

Single

Transistor Polarity

P-Channel

Resistance Drain-source Rds (on)

20 m Ohms

Drain-source Breakdown Voltage

- 55 V

Gate-source Breakdown Voltage

20 V

Continuous Drain Current

- 74 A

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Fall Time

96 ns

Gate Charge Qg

120 nC

Minimum Operating Temperature

- 55 C

Rise Time

99 ns

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

IRF4905SPBF

Manufacturer:

Quantity:

21 000

Current page: 1 of 12
Download datasheet (362Kb)

Description

Features of this design are a 150°C junction oper-

ating temperature, fast switching speed and im-

proved repetitive avalanche rating . These features

combine to make this design an extremely efficient

and reliable device for use in a wide variety of other

applications.

Features

www.irf.com

Absolute Maximum Ratings

Thermal Resistance

STG

AS (Thermally limited)

θJC

θJA

@ T

IRF4905S

Advanced Process Technology

Ultra Low On-Resistance

150°C Operating Temperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Some Parameters Are Differrent from

Lead-Free

(Tested )

= 25°C Continuous Drain Current, V

= 100°C Continuous Drain Current, V

= 25°C Continuous Drain Current, V

= 25°C Power Dissipation

Pulsed Drain Current

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

Single Pulse Avalanche Energy Tested Value

Avalanche Current

Repetitive Avalanche Energy

Operating Junction and

Storage Temperature Range

Soldering Temperature, for 10 seconds

Mounting Torque, 6-32 or M3 screw

Junction-to-Case

Junction-to-Ambient (PCB Mount, steady state)

Parameter

@ 10V

(Silicon Limited)

(Package Limited)

Gate

IRF4905SPbF

Pak

See Fig.12a, 12b, 15, 16

HEXFET

Typ.

300 (1.6mm from case )

–––

10 lbf

-55 to + 150

Drain

IRF4905SPbF

IRF4905LPbF

Max.

in (1.1N

-280

170

± 20

140

790

-70

-44

-42

1.3

Power MOSFET

DS(on)

DSS

IRF4905LPbF

Max.

0.75

= -42A

TO-262

= -55V

= 20mΩ

PD - 97034

Source

Units

W/°C

°C

Related parts for IRF4905SPBF

IRF4905SPBF Summary of contents

Page 1

... R Junction-to-Case θJC R Junction-to-Ambient (PCB Mount, steady state) θJA www.irf.com IRF4905SPbF G Gate Parameter @ 10V (Silicon Limited 10V (Silicon Limited 10V (Package Limited Parameter 97034 IRF4905SPbF IRF4905LPbF ® HEXFET Power MOSFET -55V DSS R = 20mΩ DS(on -42A Pak TO-262 IRF4905LPbF D S Drain Source Max ...

Page 2

Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) gfs Forward Transconductance I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage ...

Page 3

PULSE WIDTH Tj = 25° Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 25°C 100.0 10.0 1 -25V ≤ 60µs ...

Page 4

0V MHZ C iss = SHORTED 6000 C rss = oss = 5000 Ciss 4000 3000 Coss ...

Page 5

LIMITED BY PACKAGE 100 Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 SINGLE PULSE ( ...

Page 6

D.U DRIVER -20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit (BR)DSS Fig 12b. Unclamped Inductive Waveforms Charge ...

Page 7

Duty Cycle = Single Pulse 100 0.01 0.05 10 0.10 1 0.1 1.0E-06 1.0E-05 Fig 15. Typical Avalanche Current Vs.Pulsewidth 160 TOP Single Pulse BOTTOM 1% Duty Cycle -42A 120 ...

Page 8

D.U.T + ƒ • • - • + ‚ - • • • SD • Fig 17. Fig 18a. Switching Time Test Circuit V GS 10% 90 Fig 18b. Switching Time Waveforms 8 Driver Gate Drive P.W. ...

Page 9

T HIS IS AN IRF530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 EMBLY LINE "L" Note: "P" in assembly line position indicates "Lead-Free" OR www.irf.com (Dimensions are shown ...

Page 10

TO-262 Package Outline TO-262 Part Marking Information EXAMPLE: T HIS IS AN IRL3103L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 SEMBLY LINE "C" Note: "P" in ass embly line pos ition indicates "Lead-Free" OR ...

Page 11

TRR FEED DIRECTION 1.85 (.073) 1.65 (.065) TRL FEED DIRECTION 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. Notes: Repetitive rating; ...

Page 12

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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