IRF4905SPBF International Rectifier, IRF4905SPBF Datasheet - Page 6

• Manufacturer Part Number: IRF4905SPBF
• Description: MOSFET P-CH 55V 42A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF4905SPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 170W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: P
• Current, Drain: -70 A
• Gate Charge, Total: 120 nC
• Package Type: D2Pak
• Polarization: P-Channel
• Power Dissipation: 170 W
• Resistance, Drain To Source On: 0.020 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 51 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 19 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 m Ohms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 74 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 96 ns
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 99 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
6
Fig 13a. Basic Gate Charge Waveform
V
12V
G
V
I
GS
R
AS
-20V
G
V DS
Same Type as D.U.T.
Q
Current Regulator
GS
.2µF
t p
50KΩ
-3mA
Current Sampling Resistors
I AS
D.U.T
.3µF
Charge
Q
t p
Q
0.01 Ω
L
GD
I
G
G
D.U.T.
V
I
DRIVER
D
(BR)DSS
+
-
V
DS
15V
V DD
A
Fig 14. Threshold Voltage Vs. Temperature
600
500
400
300
200
100
3.6
3.2
2.8
2.4
2.0
0
Fig 12c. Maximum Avalanche Energy
-75
25
-50
Starting T J , Junction Temperature (°C)
50
-25
Vs. Drain Current
T J , Temperature ( °C )
0
75
25
50
100
TOP
BOTTOM
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75
I D = -250µA
100 125
125
-30A
-17A
-42A
I D
150
150