IRF4905SPBF International Rectifier, IRF4905SPBF Datasheet - Page 5

• Manufacturer Part Number: IRF4905SPBF
• Description: MOSFET P-CH 55V 42A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF4905SPBF

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 42A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 42A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 3500pF @ 25V
• Power - Max: 170W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Channel Type: P
• Current, Drain: -70 A
• Gate Charge, Total: 120 nC
• Package Type: D2Pak
• Polarization: P-Channel
• Power Dissipation: 170 W
• Resistance, Drain To Source On: 0.020 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 51 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 19 S
• Voltage, Breakdown, Drain To Source: -55 V
• Voltage, Drain To Source: –55 V
• Voltage, Forward, Diode: -1.3 V
• Voltage, Gate To Source: ±20 V
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 20 m Ohms
• Drain-source Breakdown Voltage: - 55 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 74 A
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Fall Time: 96 ns
• Gate Charge Qg: 120 nC
• Minimum Operating Temperature: - 55 C
• Rise Time: 99 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.001
0.01
0.1
80
60
40
20
Fig 9. Maximum Drain Current Vs.
1
0
1E-006
25
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
Case Temperature
0.20
0.02
0.10
0.05
0.01
SINGLE PULSE
( THERMAL RESPONSE )
50
T C , Case Temperature (°C)
LIMITED BY PACKAGE
75
1E-005
100
125
t 1 , Rectangular Pulse Duration (sec)
0.0001
150
τ
J
τ
J
τ
1
2.0
1.5
1.0
0.5
Ci= τi/Ri
τ
1
Ci τi/Ri
Fig 10. Normalized On-Resistance
-60 -40 -20
R
0.001
I D = -42A
V GS = -10V
1
R
1
τ
2
τ
R
T J , Junction Temperature (°C)
2
2
Vs. Temperature
R
2
0
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
R
τ
20
3
3
R
τ
3
3
40
τ
C
τ
Ri (°C/W)
0.01
60
0.1165
0.3734
0.2608
80 100 120 140 160
0.000068
0.002347
0.014811
τi (sec)
5
0.1