IXTA1N120P IXYS, IXTA1N120P Datasheet

no-image

IXTA1N120P

Manufacturer Part Number
IXTA1N120P
Description
MOSFET N-CH 1200V 1A TO-263
Manufacturer
IXYS
Series
PolarVHV™r
Datasheet

Specifications of IXTA1N120P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
20 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
1200V (1.2kV)
Current - Continuous Drain (id) @ 25° C
1A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
17.6nC @ 10V
Input Capacitance (ciss) @ Vds
550pF @ 25V
Power - Max
63W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
20 Ohms
Drain-source Breakdown Voltage
1200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
1 A
Power Dissipation
63 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
1200
Id(cont), Tc=25°c, (a)
1.0
Rds(on), Max, Tj=25°c, (?)
20
Ciss, Typ, (pf)
445
Qg, Typ, (nc)
17.6
Trr, Typ, (ns)
900
Pd, (w)
63
Rthjc, Max, (k/w)
2.0
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTA1N120P
Manufacturer:
IXYS
Quantity:
18 000
Polar VHV
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Symbol
V
V
V
V
I
I
I
E
E
dV/dt
P
T
T
T
T
T
M
Weight
Symbol
(T
BV
V
I
I
R
© 2007 IXYS CORPORATION, All rights reserved
D25
DM
A
GSS
DSS
J
JM
stg
L
SOLD
DSS
DGR
GSS
GSM
AR
AS
D
GS(th)
DS(on)
d
J
DSS
= 25°C, unless otherwise specified)
Test Conditions
T
T
Continuous
Transient
T
T
T
T
T
I
T
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque
TO-263
TO-220
V
V
V
V
V
V
Test Conditions
S
J
J
C
C
C
C
C
C
GS
DS
GS
DS
GS
GS
= 25°C to 150°C
= 25°C to 150°C, R
= 25°C
= 25°C, pulse width limited by T
= 25°C
= 25°C
= 25°C
≤ I
= 25°C
= 0V, I
= V
= ±20V, V
= V
= 0V
= 10V, I
DM
GS
, V
TM
DSS
, I
DD
D
D
D
= 250μA
≤ V
= 50μA
= 0.5 • I
DS
DSS
= 0V
, T
(TO-220)
D25
J
GS
≤ 150°C
, Note 1
= 1MΩ
T
J
= 125°C
JM
IXTA1N120P
IXTP1N120P
-55 ... +150
-55 ... +150
Maximum Ratings
1.13 / 10
1200
2.5
Min.
Characteristic Values
1200
1200
2.50
3.00
±20
±30
100
150
300
260
1.0
1.8
1.0
10
10
63
15.5
Typ.
Nm/lb.in.
200 μA
±50 nA
20
5
4.5
Max.
V/ns
mJ
mJ
μA
°C
°C
°C
°C
°C
W
Ω
V
V
V
V
A
A
A
V
V
g
g
V
I
R
TO-263 (IXTA)
TO-220 (IXTP)
G = Gate
S = Source
Features
Advantages
Applications:
D25
International standard packages
Unclamped Inductive Switching
(UIS) rated
Low package inductance
- easy to drive and to protect
Switched-mode and resonant-mode
power supplies
DC-DC Converters
Laser Drivers
AC and DC motor controls
Robotics and servo controls
Easy to mount
Space savings
High power density
DS(on)
DSS
G
D
G
S
= 1200V
=
≤ ≤ ≤ ≤ ≤
S
D = Drain
TAB = Drain
1.0A
20Ω Ω Ω Ω Ω
(TAB)
DS99870 (08/07)
(TAB)

Related parts for IXTA1N120P

IXTA1N120P Summary of contents

Page 1

... ±20V GSS DSS DS DSS 10V 0.5 • I DS(on D25 © 2007 IXYS CORPORATION, All rights reserved IXTA1N120P IXTP1N120P Maximum Ratings 1200 = 1MΩ 1200 GS ±20 ±30 1.0 1.8 JM 1.0 10 100 ≤ 150° -55 ... +150 150 -55 ... +150 300 260 1. 2.50 3.00 Characteristic Values Min ...

Page 2

... D D25 10.6 0.5 Characteristic Values (T = 25°C, unless otherwise specified) J Min. Typ. 900 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXTA1N120P IXTP1N120P TO-220 (IXTP) Outline Max Pins Gate nC 2.0 °C/W °C/W Max. 1.0 A 3 6,404,065 B1 ...

Page 3

... I - Amperes D Fig. 6. Input Admittance 0.8 0.7 0.6 0 125ºC J 25ºC 0.4 -40ºC 0.3 0.2 0.1 0 3.2 3.4 3.6 3.8 4 4.2 4.4 4.6 4 Volts GS IXTA1N120P IXTP1N120P = 10V 0.5A Value 125º 25º 1.2 1.4 5 5.2 5.4 5.6 5.8 ...

Page 4

... Fig. 11. Maximum Transient Thermal Impedance 0.001 0.01 Pulse Width - Seconds Fig. 8. Forward Voltage Drop of Intrinsic Diode T = 125ºC J 0.3 0.4 0.5 0.6 0.7 0 Volts SD Fig. 10. Capacitance C iss C oss C rss MHz Volts DS 0.1 1 IXYS REF: T_1N120P(2A-245)10-27-06 IXTA1N120P IXTP1N120P T = 25ºC J 0.9 1 1.1 1 ...

Related keywords