IXTA300N04T2 IXYS, IXTA300N04T2 Datasheet - Page 4

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IXTA300N04T2

Manufacturer Part Number
IXTA300N04T2
Description
MOSFET N-CH 40V 300A TO-263
Manufacturer
IXYS
Series
TrenchT2™r
Datasheet

Specifications of IXTA300N04T2

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
300A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
145nC @ 10V
Input Capacitance (ciss) @ Vds
10700pF @ 25V
Power - Max
480W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Vdss, Max, (v)
40
Id(cont), Tc=25°c, (a)
300
Rds(on), Max, Tj=25°c, (?)
0.0025
Ciss, Typ, (pf)
10700
Qg, Typ, (nc)
145
Trr, Typ, (ns)
53
Pd, (w)
480
Rthjc, Max, (k/w)
0.31
Package Style
TO-263
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, test conditions, and dimensions.
100,000
10,000
320
280
240
200
160
120
180
160
140
120
100
1,000
80
40
80
60
40
20
100
0
0
0.3
3.0
0
0.4
f
= 1 MHz
5
3.5
Fig. 9. Forward Voltage Drop of
0.5
Fig. 7. Input Admittance
10
T
0.6
J
Fig. 11. Capacitance
= 150ºC
4.0
Intrinsic Diode
T
J
15
V
0.7
= 150ºC
GS
V
- 40ºC
V
25ºC
SD
DS
- Volts
4.5
0.8
- Volts
20
- Volts
0.9
T
J
25
= 25ºC
5.0
C oss
C iss
C rss
1.0
30
1.1
5.5
35
1.2
6.0
1.3
40
1,000
100
160
140
120
100
10
80
60
40
20
10
1
0
9
8
7
6
5
4
3
2
1
0
1
0
0
External Lead Current Limit
R
DS(
T
T
Single Pulse
Fig. 12. Forward-Bias Safe Operating Area
V
I
I
J
C
D
G
DS
on
= 175ºC
20
= 25ºC
= 150A
= 10mA
20
)
= 20V
Limit
40
Fig. 8. Transconductance
40
Fig. 10. Gate Charge
60
Q
G
60
I
- NanoCoulombs
D
V
80
- Amperes
DS
10
- Volts
80
100
IXTA300N04T2
IXTP300N04T2
IXYS REF: T_300N04T2(V6)08-14-08
120
100
T
J
= - 40ºC
DC
140
120
25ºC
25µs
100µs
1ms
10ms
100ms
150ºC
160
140
180
100

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