IXTP76N25T IXYS, IXTP76N25T Datasheet

IXTP76N25T

Manufacturer Part Number

IXTP76N25T

Description

MOSFET N-CH 250V 76A TO-220

Manufacturer

IXYS

Datasheet

1.IXTP76N25T.pdf (6 pages)

Specifications of IXTP76N25T

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

39 mOhm @ 500mA, 10V

Drain To Source Voltage (vdss)

250V

Current - Continuous Drain (id) @ 25° C

76A

Vgs(th) (max) @ Id

5V @ 1mA

Gate Charge (qg) @ Vgs

92nC @ 10V

Input Capacitance (ciss) @ Vds

4500pF @ 25V

Power - Max

460W

Mounting Type

Through Hole

Package / Case

TO-220

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.039 Ohms

Drain-source Breakdown Voltage

250 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

76 A

Power Dissipation

460 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Vdss, Max, (v)

250

Id(cont), Tc=25°c, (a)

Rds(on), Max, Tj=25°c, (?)

0.039

Ciss, Typ, (pf)

4920

Qg, Typ, (nc)

Trr, Typ, (ns)

148

Trr, Max, (ns)

Pd, (w)

460

Rthjc, Max, (k/w)

0.27

Package Style

TO-220

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Trench Gate

Power MOSFET

N-Channel Enhancement Mode

TO-263 (IXTA)

Symbol

Weight

Symbol

D25

GSS

DSS

stg

DSS

DGR

GSM

GS(th)

DS(on)

DSS

= 25°C unless otherwise specified)

Test Conditions

Transient

1.6mm (0.062in.) from case for 10s

Plastic body for 10seconds

Mounting Torque TO-220,TO-3P,TO247

Mounting Force TO-262,TO-263

Test Conditions

= 25°C to 150°C

= 25°C to 150°C, R

= 25°C

= 25°C, pulse width limited by T

= 25°C

= 0V, I

= V

= ± 20V, V

= V

= 0V

= 10V, I

DSS

(TAB)

, I

= 1mA

= 10A

= 1mA

= 0.5 • I

= 0V

TO-247 (IXTH)

D25

, Note 1

TO-262,TO-263

TO-220

TO-3P

TO-247

= 1MΩ

Preliminary Technical Information

IXTA76N25T IXTH76N25T

IXTI76N25T IXTP76N25T

IXTQ76N25T

= 125°C

10..65 / 2.2..14.6

(TAB)

Characteristic Values

-55 ... +150

250

Min.

Maximum Ratings

1.13 / 10

± 30

250

170

460

150

300

260

2.5

3.0

5.5

6.0

Typ .

1.5

300

TO-262 (IXTI)

± 100 nA

Max.

Nm/lb.in.

200 μA

39 mΩ

2 μA

N/lb.

°C

(TAB)

Typical avalanche BV = 300V

G = Gate

S = Source

Features

Advantages

Applications

D25

Avalanche rated

International standard packages

Low package inductance

- easy to drive and to protect

DC-DC converters

Battery chargers

Switched-mode and resonant-mode

power supplies

DC choppers

AC motor control

Uninterruptible power supplies

High speed power switching

applications

Easy to mount

Space savings

High power density

DS(on)

DSS

TO-220 (IXTP)

TO-3P (IXTQ)

≤ ≤ ≤ ≤ ≤

D S

D = Drain

TAB = Drain

250V

76A

39mΩ Ω Ω Ω Ω

DS99663C(10/07)

(TAB)

Related parts for IXTP76N25T

IXTP76N25T Summary of contents

Page 1

... GSS DSS DS DSS 10V 0.5 • I DS(on © 2007 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXTA76N25T IXTH76N25T IXTI76N25T IXTP76N25T IXTQ76N25T TO-262 (IXTI) G (TAB Maximum Ratings 250 = 1MΩ 250 GS ± 170 JM 8 1.5 460 -55 ... +150 150 -55 ... +150 300 260 1 ...

Page 2

... IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or moreof the following U.S. patents: 4,850,072 4,881,106 IXTI76N25T IXTP76N25T IXTQ76N25T Characteristic Values Min. Typ. , Note 1 43 ...

Page 3

... TO-263 (IXTA) Outline TO-247 (IXTH) Outline ∅ Terminals Gate 2 - Drain 3 - Source Tab - Drain Leaded 262 (IXTI) Outline © 2007 IXYS CORPORATION, All rights reserved IXTI76N25T IXTP76N25T IXTQ76N25T Dim. Millimeter Inches Min. Max. Min. Max. A 4.7 5.3 .185 .209 A 2.2 2.54 .087 ...

Page 4

... V = 10V GS 3.2 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0 Amperes D IXYS reserves the right to change limits, test conditions, and dimensions. IXTI76N25T IXTP76N25T IXTQ76N25T 180 = 10V 8V 160 140 7V 120 100 2.0 2.5 3.0 3.5 3 10V GS 3.0 7V 2.8 2.6 2 ...

Page 5

... V - Volts SD Fig. 11. Capacitance 10,000 MHz 1,000 100 Volts DS © 2007 IXYS CORPORATION, All rights reserved IXTI76N25T IXTP76N25T IXTQ76N25T 5.5 6.0 6.5 7 25ºC J 0.9 1.0 1.1 1.2 1.00 C iss C oss 0.10 C rss 0. IXTA76N25T IXTH76N25T Fig. 8. Transconductance 120 ...

Page 6

... R - Ohms G Fig. 17. Resistive Turn-off Switching Times vs. Drain Current 25º 125º 25º 3.3 Ω 125º Amperes D IXYS reserves the right to change limits, test conditions, and dimensions. IXTI76N25T IXTP76N25T IXTQ76N25T = 3.3 Ω 15V 125V 105 115 125 38A 76A d(off) = 15V ...

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