IRFP264 IXYS, IRFP264 Datasheet
IRFP264
Manufacturer Part Number
IRFP264
Description
MOSFET N-CH TO-247
Manufacturer
IXYS
Datasheet
1.IRFP264.pdf
(2 pages)
Specifications of IRFP264
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 23A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
38A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
210nC @ 10V
Input Capacitance (ciss) @ Vds
4800pF @ 25V
Power - Max
280W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
38 A
Power Dissipation
280000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
250
Id(cont), Tc=25°c, (a)
38
Rds(on), Max, Tj=25°c, (?)
0.075
Ciss, Typ, (pf)
4800
Qg, Typ, (nc)
-
Trr, Typ, (ns)
370
Pd, (w)
280
Rthjc, Max, (k/w)
0.45
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFP264X
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP264
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFP264NPBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
IRFP264PBF
Manufacturer:
FSC
Quantity:
12 000
Company:
Part Number:
IRFP264PBF
Manufacturer:
IR
Quantity:
1 000
Part Number:
IRFP264PBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Standard Power MOSFET
N-Channel Enhancement Mode
Symbol
V
V
V
V
I
I
I
E
dv/dt
P
T
T
T
M
Weight
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Symbol
V
V
I
I
R
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
DM
AR
GSS
D25
DSS
GS
GSM
AR
JM
stg
DSS
DGR
D
J
DSS
GS(th)
DS(on)
d
Test Conditions
T
T
Continuous
Transient
T
T
T
I
T
T
Mounting torque
Test Conditions
V
V
V
V
V
Pulse test, t 300 s, duty cycle d 2 %
S
V
J
J
C
C
C
J
C
GS
GS
GS
DS
DS
GS
= 25 C to 150 C
= 25 C to 150 C; R
= 25 C
= 25 C, pulse width limited by T
= 25 C
= 25 C
150 C, R
= 0 V, I
= V
= 20 V
= 0.8 • V
= 0 V
= 10 V, I
I
DM
, di/dt 100 A/ s, V
GS
, I
D
D
DC
D
= 250 A
= 250 A
DSS
G
, V
= 23 A
= 2
DS
= 0
GS
= 1 M
DD
T
T
J
J
(T
= 25 C
= 125 C
V
DSS
J
= 25 C, unless otherwise specified)
JM
,
min.
250
Characteristic Values
2
-55 ... +150
-55 ... +150
Maximum Ratings
IRFP 264
typ.
1.13/10 Nm/lb.in.
250
250
150
280
150
300
20
30
38
38
28
5
6
0.075
max.
100
250
25
4
V/ns
mJ
nA
W
V
V
V
V
A
A
A
V
V
g
C
C
C
C
A
A
V
I
R
TO-247 AD
G = Gate,
S = Source,
Features
l
l
l
l
l
Applications
l
l
l
l
Advantages
l
l
l
D (cont)
International standard package
JEDEC TO-247 AD
Low R
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Switch-mode and resonant-mode
power supplies
Motor controld
Uninterruptible Power Supplies (UPS)
DC choppers
Easy to mount with 1 screw
(isolated mounting screw hole)
Space savings
High power density
DSS
DS(on)
DS (on)
= 250 V
= 38 A
= 0.075
HDMOS
D = Drain,
TAB = Drain
TM
process
D (TAB)
96668(1/96)
1 - 2
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IRFP264 Summary of contents
Page 1
... GSS 0.8 • V DSS DS DSS DS(on Pulse test, t 300 s, duty cycle IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved IRFP 264 Maximum Ratings 250 = 1 M 250 150 DSS 280 -55 ... +150 150 -55 ... +150 1.13/10 Nm/lb.in. ...
Page 2
... 0.45 0.25 Characteristic Values ( unless otherwise specified) J min. typ. max. 38 150 JM 1.8 = 100 V 370 R IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 4,850,072 4,931,844 5,034,796 5,063,307 IRFP 264 TO-247 AD Outline Terminals Gate ...