IXTQ36N30P IXYS, IXTQ36N30P Datasheet - Page 3
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IXTQ36N30P
Manufacturer Part Number
IXTQ36N30P
Description
MOSFET N-CH 300V 36A TO-3P
Manufacturer
IXYS
Series
PolarHT™r
Datasheet
1.IXTP36N30P.pdf
(5 pages)
Specifications of IXTQ36N30P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
110 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
2250pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-3P
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.11 Ohms
Drain-source Breakdown Voltage
300 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
300
Id(cont), Tc=25°c, (a)
36
Rds(on), Max, Tj=25°c, (?)
0.11
Ciss, Typ, (pf)
2250
Qg, Typ, (nc)
70
Trr, Typ, (ns)
250
Pd, (w)
300
Rthjc, Max, (k/w)
0.42
Package Style
TO-3P
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXTQ36N30P
Manufacturer:
IXYS
Quantity:
5 000
Company:
Part Number:
IXTQ36N30P
Manufacturer:
IXYS
Quantity:
18 000
Part Number:
IXTQ36N30P
Manufacturer:
IXYS/艾赛斯
Quantity:
20 000
© 2005 IXYS All rights reserved
4.2
3.8
3.4
2.6
2.2
1.8
1.4
0.6
36
33
30
27
24
21
18
15
12
36
33
30
27
24
21
18
15
12
9
6
3
0
9
6
3
0
3
1
0
0
0
V
0.5
1
GS
10
Fig. 3. Output Characteristics
Fig. 5. R
Fig. 1. Output Characteristics
= 10V
1
2
20
0.5 I
T
1.5
J
3
= 125ºC
30
DS(on)
V
V
V
D25
I
V
GS
GS
D S
D
4
2
@ 125
D S
- Amperes
@ 25
Value vs. I
40
= 10V
= 10V
- Volts
Norm alized to
2.5
- Volts
9V
8V
5
9V
50
º
º
C
C
6
3
7V
5V
6V
8V
7V
6V
60
T
3.5
J
7
D
= 25ºC
70
8
4
4.5
80
9
10
90
5
3.1
2.8
2.5
2.2
1.9
1.6
1.3
0.7
0.4
90
80
70
60
50
40
30
20
10
40
35
30
25
20
15
10
0
1
5
0
-50
-50
Fig. 2. Extended Output Characteristics
0
Fig. 4. R
V
Value vs. Junction Tem perature
3
GS
-25
-25
IXTA 36N30P IXTP 36N30P
Fig. 6. Drain Current vs. Case
= 10V
6
T
0
0
DS(on
T
C
V
J
GS
- Degrees Centigrade
9
- Degrees Centigrade
Tem perature
= 10V
25
25
)
12
Norm alized to 0.5 I
V
@ 25
I
D
D S
= 36A
15
50
50
- Volts
º
C
18
75
75
IXTQ 36N30P
I
9V
8V
7V
6V
21
D
100
100
= 18A
24
D25
125
125
27
150
150
30