STP14NK60ZFP STMicroelectronics, STP14NK60ZFP Datasheet - Page 6

• Manufacturer Part Number: STP14NK60ZFP
• Description: MOSFET N-CH 600V 13.5A TO-220FP
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP14NK60ZFP

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 13.5A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 75nC @ 10V
• Input Capacitance (ciss) @ Vds: 2220pF @ 25V
• Power - Max: 40W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 450mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.5 Ohms
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 13.5 A
• Power Dissipation: 40 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical characteristics
6/19
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Symbol
Symbol
I
t
V
SDM
t
t
r(Voff)
I
I
d(on)
d(off)
RRM
RRM
I
SD
Q
Q
t
t
SD
t
t
t
t
c
r
f
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Off-voltage rise time
Fall time
Cross-over time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
STP14NK60Z-STP14NK60ZFP-STB14NK60Z-STB14NK60Z-1-
V
R
(see Figure 18)
V
R
(see Figure 18)
V
R
(see Figure 20)
I
I
di/dt = 100A/µs,
V
I
di/dt = 100A/µs,
V
DD
DD
DD
SD
SD
SD
G
G
G
DD
DD
=4.7Ω, V
=4.7Ω, V
=4.7Ω, V
Test conditions
=300 V, I
=300V, I
=480 V, I
=12A, V
=12A,
=12A,
Test conditions
=50V
=50V, Tj=150°C
GS
GS
D
GS
GS
D
D
=6A,
=6A,
=12A,
=0
=10V
=10V
=10V
Min.
Min
Typ.
19.3
20.5
Typ.
490
664
4.7
6.8
9.5
26
18
62
13
12
22
Max
Max.
1.6
12
48
Unit
Unit
µC
µC
ns
ns
ns
ns
ns
ns
ns
ns
ns
A
A
V
A
A