IXTA90N15T IXYS, IXTA90N15T Datasheet - Page 3

• Manufacturer Part Number: IXTA90N15T
• Description: MOSFET N-CH 150V 90A TO-263
• Manufacturer: IXYS

Specifications of IXTA90N15T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 20 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 4.5V @ 1mA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 4100pF @ 25V
• Power - Max: 455W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 90 A
• Power Dissipation: 455 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 150
• Id(cont), Tc=25°c, (a): 90
• Rds(on), Max, Tj=25°c, (?): 0.02
• Ciss, Typ, (pf): 4100
• Qg, Typ, (nc): 80
• Trr, Typ, (ns): 110
• Trr, Max, (ns): -
• Pd, (w): 455
• Rthjc, Max, (k/w): 0.33
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2007 IXYS CORPORATION, All rights reserved
TO-263 (IXTA) Outline
TO-220 (IXTP) Outline
Pins: 1 - Gate 2 - Drain 3 - Source
TO-3P (IXTQ) Outline
TO-247 (IXTH) Outline
Dim.
Terminals: 1 - Gate 2 - Drain
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
IXTA90N15T IXTH90N15T
IXTP90N15T IXTQ90N15T
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
4.7
2.2
2.2
1.0
Millimeter
.4
1
3 - Source
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
∅ P
0.205
0.232
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
0.225
0.252
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216