STD16N65M5 STMicroelectronics, STD16N65M5 Datasheet - Page 8

• Manufacturer Part Number: STD16N65M5
• Description: MOSFET N-CH 650V 12A DPAK
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STD16N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 299 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 45nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 100V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.299 Ohm @ 10 V
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: 25 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 0.27ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8774-2

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
(norm)
V
GS(th)
1.00
0.70
1.10
0.60
0.90
0.80
-50
vs temperature
0
50
100
T
J
(°C)
Doc ID 18146 Rev 1
AM03184v1
Figure 15. Source-drain diode forward
(V)
V
0.7
0.6
0.5
0.8
0.4
1.0
0.9
SD
0
characteristics
T
J
=25°C
STB16N65M5, STD16N65M5
5
T
J
=-25°C
10
T
J
=150°C
I
SD
AM03186v1
(A)