STP15NK50Z STMicroelectronics, STP15NK50Z Datasheet - Page 5

• Manufacturer Part Number: STP15NK50Z
• Description: MOSFET N-CH 500V 14A TO-220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP15NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 340 mOhm @ 7A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 14A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 106nC @ 10V
• Input Capacitance (ciss) @ Vds: 2260pF @ 25V
• Power - Max: 160W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 7A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 300mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.34 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 14 A
• Power Dissipation: 160 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

STP15NK50Z - STP15NK50ZFP - STB15NK50Z - STB15NK50Z-1 - STW15NK50Z Electrical charac-
2
Electrical characteristics
(T
Table 5.
Table 6.
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
CASE
V
oss eq
(BR)DSS
g
t
t
C
I
inceases from 0 to 80% V
I
C
C
GS(th)
DS(on)
Q
Q
d(on)
d(off)
DSS
GSS
fs
Q
oss
t
oss eq.
t
rss
iss
gs
gd
r
f
g
(1)
=25°C unless otherwise specified)
(2)
.
is defined as a constant equivalent capacitance giving the same charging time as C
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage current
(V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
DS
= 0)
Parameter
Parameter
GS
= 0)
DSS
V
V
V
V
V
V
R
(see Figure 18)
I
V
V
V
V
V
D
GS
GS
DS
DS
DD
DD
G
DS
DS
GS
DS
GS
= 1mA, V
=4.7Ω, V
=0, V
=400V, I
=250 V, I
= V
= 10V, I
=25V, f=1 MHz, V
=15V, I
=10V
= Max rating,
= Max rating @125°C
= ±20V
Test conditions
Test conditions
GS
DS
, I
D
D
GS
D
=0V to 400V
D
GS
D
= 7A
= 7A
= 100µA
= 14A
=7A,
= 0
=10V
GS
=0
Min.
Min.
500
3
2260
Typ.
Typ.
3.75
0.30
264
150
12
64
76
15
40
20
23
62
15
oss
Max.
Max.
0.34
106
when V
±
4.5
50
10
1
DS
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
S
V
V
Ω
5/19