IXFH10N80P IXYS, IXFH10N80P Datasheet - Page 2

• Manufacturer Part Number: IXFH10N80P
• Description: MOSFET N-CH 800V 10A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFH10N80P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.1 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 5.5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 40nC @ 10V
• Input Capacitance (ciss) @ Vds: 2050pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.1 Ohms
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 800
• Id(cont), Tc=25°c, (a): 10
• Rds(on), Max, Tj=25°c, (?): 1.1
• Ciss, Typ, (pf): 2050
• Qg, Typ, (nc): 40
• Trr, Typ, (ns): -
• Trr, Max, (ns): 250
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Symbol
(T
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
Source-Drain Diode
Symbol
(T
I
I
V
t
I
Q
Note 1. Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 %
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
by one or more of the following U.S. patents: 4,850,072
S
SM
RM
d(on)
r
d(off)
f
rr
fs
SD
iss
oss
rss
thJC
thCS
thCS
g(on)
gs
gd
RM
J
J
= 25°C, Unless Otherwise Specified)
= 25°C, Unless Otherwise Specified)
Test Conditions
V
V
V
(TO-220)
(TO-247 & TO-3P)
Test Conditions
V
Repetitive, Pulse WidthLlimited by T
I
Resistive Switching Times
V
R
I
-di/dt = 100A/μs
V
F
F
100.0
DS
GS
GS
GS
GS
R
G
= I
10.0
= 10A, V
1.0
0.1
= 20V, I
= 10V, V
= 100V
= 0V, V
= 0V
= 5Ω (External)
= 10V, V
S
, V
10
GS
= 0V, Note 1
GS
D
DS
T
T
Single Pulse
DS
= 0.5 • I
J
C
DS
= 0V
= 25V, f = 1MHz
= 1 50ºC
= 25ºC
= 0.5 • V
= 0.5 • V
Fig. 1. Forward-Bias Safe Operating Area
4,835,592
4,881,106
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
= 0.5 • I
= 0.5 • I
V
DS
5,049,961
5,063,307
5,187,117
100
- Volts
JM
D25
D25
5,237,481
5,381,025
5,486,715
7
Characteristic Values
Min.
Characteristic Values
Min.
6,162,665
6,259,123 B1
6,306,728 B1
2050
1 ms
0.50
0.25
200
172
3.0
0.6
Typ.
Typ.
16
21
22
62
22
40
12
14
11
1000
0.42 °C/W
25µs
1 00µs
250
6,404,065 B1
6,534,343
6,583,505
1.5
Max
Max
10
30
°C/W
°C/W
μC
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
IXFQ10N80P IXFH10N80P
6,683,344
IXFA10N80P IXFP10N80P
6,710,405 B2 6,759,692
6,710,463
6,727,585
6,771,478 B2 7,071,537
7,005,734 B2
7,063,975 B2
7,157,338B2