IXFA7N100P IXYS, IXFA7N100P Datasheet - Page 3

• Manufacturer Part Number: IXFA7N100P
• Description: MOSFET N-CH 1000V 7A D2PAK
• Manufacturer: IXYS
• Series: Polar™r

Specifications of IXFA7N100P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 7A
• Vgs(th) (max) @ Id: 6V @ 1mA
• Gate Charge (qg) @ Vgs: 47nC @ 10V
• Input Capacitance (ciss) @ Vds: 2590pF @ 25V
• Power - Max: 300W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 7
• Rds(on), Max, Tj=25°c, (?): 1.9
• Ciss, Typ, (pf): 2590
• Qg, Typ, (nc): 47
• Trr, Typ, (ns): -
• Trr, Max, (ns): 300
• Pd, (w): 300
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-263
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2009 IXYS CORPORATION, All Rights Reserved
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
0
0
0
V
GS
3
= 10V
Fig. 1. Output Characteristics @ TJ = 25ºC
2
Fig. 5. R
2
Fig. 3. Output Characteristics @ T
6
4
4
DS(on)
9
vs. Drain Current
Normalized to I
V
DS
I
6
6
V
D
12
DS
- Amperes
- Volts
- Volts
V
15
GS
T
8
8
J
= 125ºC
= 10V
V
GS
8V
7V
6V
5V
D
18
= 10V
= 3.5A Value
8V
10
10
T
J
J
7V
6V
5V
= 25ºC
= 125ºC
21
12
12
24
14
27
14
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
3.0
2.6
2.2
1.8
1.4
1.0
0.6
0.2
14
12
10
8
6
4
2
0
-50
-50
0
Fig. 2. Extended Output Characteristics @ TJ = 25ºC
V
GS
Fig. 4. R
= 10V
-25
-25
5
Fig. 6. Maximum Drain Current vs.
DS(on)
0
0
10
Junction Temperature
T
Normalized to I
Case Temperature
C
T
25
25
J
- Degrees Centigrade
V
- Degrees Centigrade
DS
15
- Volts
50
50
V
GS
20
= 10V
8V
D
75
75
= 3.5A Value vs.
7V
6V
5V
I
IXFA7N100P
IXFP7N100P
D
= 7A
25
I
100
100
D
= 3.5A
30
125
125
150
150
35