IXTH3N100P IXYS, IXTH3N100P Datasheet - Page 4

• Manufacturer Part Number: IXTH3N100P
• Description: MOSFET N-CH 1000V 3A TO-247
• Manufacturer: IXYS
• Series: PolarVHV™r

Specifications of IXTH3N100P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.8 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Vdss, Max, (v): 1000
• Id(cont), Tc=25°c, (a): 3.0
• Rds(on), Max, Tj=25°c, (?): 4.8
• Ciss, Typ, (pf): 1100
• Qg, Typ, (nc): 39
• Trr, Typ, (ns): 820
• Pd, (w): 125
• Rthjc, Max, (k/w): 1.0
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10,000
1,000
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
9
8
7
6
5
4
3
2
1
0
0.4
3.0
0
0.45
f
= 1 MHz
3.5
5
Fig. 9. Forward Voltage Drop of
0.5
10
Fig. 7. Input Admittance
4.0
0.55
Fig. 11. Capacitance
Intrinsic Diode
15
V
0.6
V
V
T
SD
GS
J
DS
4.5
= 125ºC
- Volts
- Volts
- Volts
T
0.65
J
20
= 125ºC
- 40ºC
25ºC
5.0
0.7
25
C iss
C oss
C rss
0.75
5.5
30
0.8
T
J
6.0
35
= 25ºC
0.85
0.9
6.5
40
10.00
1.00
0.10
0.01
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.00001
10
9
8
7
6
5
4
3
2
1
0
0.0
0
V
I
I
D
G
DS
= 1.5A
= 1mA
0.5
Fig. 12. Maximum Transient Thermal
0.0001
5
= 500V
Fig. 8. Transconductance
1.0
10
IXTA3N100P IXTP3N100P
0.001
Fig. 10. Gate Charge
Q
Pulse Width - Seconds
G
1.5
I
15
- NanoCoulombs
D
Impedance
- Amperes
0.01
2.0
20
2.5
25
T
0.1
J
IXYS REF: T_3N100P(3C)4-03-08-A
= - 40ºC
IXTH3N100P
125ºC
25ºC
3.0
30
1
3.5
35
10
4.0
40