IXTP18N60PM IXYS, IXTP18N60PM Datasheet - Page 4
![MOSFET N-CH TO-220](/photos/13/92/139247/irfi530npbf_sml.jpg)
IXTP18N60PM
Manufacturer Part Number
IXTP18N60PM
Description
MOSFET N-CH TO-220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet
1.IXTP18N60PM.pdf
(4 pages)
Specifications of IXTP18N60PM
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
420 mOhm @ 9A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
9A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
90W
Mounting Type
Through Hole
Package / Case
TO-220
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
9.0
Rds(on), Max, Tj=25°c, (?)
0.42
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
50
Trr, Typ, (ns)
500
Pd, (w)
90
Rthjc, Max, (k/w)
1.39
Package Style
Overmolded TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
10,000
1,000
100
70
60
50
40
30
20
10
40
35
30
25
20
15
10
10
5
0
0
0.3
3.5
0
Fig. 9. Forward Voltage Drop of Intrinsic Diode
f
0.4
= 1MHz
4.0
5
0.5
10
4.5
Fig. 7. Input Admittance
Fig. 11. Capacitance
T
J
0.6
= 125ºC
15
- 40ºC
25ºC
V
5.0
T
V
DS
V
J
SD
GS
= 125ºC
- Volts
0.7
- Volts
20
- Volts
5.5
0.8
25
C iss
C oss
C rss
6.0
0.9
30
T
J
= 25ºC
6.5
1.0
35
7.0
1.1
40
0.01
0.1
24
20
16
12
10
10
0.0001
8
4
0
9
8
7
6
5
4
3
2
1
0
1
0
0
V
I
I
Fig. 12. Maximum Transient Thermal Impedance
D
G
4
DS
5
= 9A
= 10mA
= 300V
0.001
10
8
Fig. 8. Transconductance
12
15
T
J
= - 40ºC
Fig. 10. Gate Charge
Pulse Width - Seconds
Q
0.01
16
20
G
- NanoCoulombs
25ºC
I
D
IXTP18N60PM
- Amperes
125ºC
25
20
0.1
30
24
35
28
IXYS REF: F_18N60P(63)8-21-06-B
40
32
1
45
36
50
10
40