IXTH22N50P IXYS, IXTH22N50P Datasheet - Page 5

• Manufacturer Part Number: IXTH22N50P
• Description: MOSFET N-CH 500V 22A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTH22N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 5.5V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 2630pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 350 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 22
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 2880
• Qg, Typ, (nc): 50
• Trr, Typ, (ns): 400
• Pd, (w): 350
• Rthjc, Max, (k/w): 0.35
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXTH 22N50P IXTQ 22N50P
IXTV 22N50P IXTV 22N50PS
Fig. 13. Maxim um Transient Therm al Resistance
1.00
0.10
0.01
0.1
1
10
100
1000
Pulse Width - milliseconds
PLUS220SMD (IXTV_S) Outline
PLUS220 (IXTV) Outline
© 2006 IXYS All rights reserved