IXFH18N60P IXYS, IXFH18N60P Datasheet - Page 2

MOSFET N-CH 600V 18A TO-247

IXFH18N60P

Manufacturer Part Number
IXFH18N60P
Description
MOSFET N-CH 600V 18A TO-247
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXFH18N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 2.5mA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
TO-247AD
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohms
Forward Transconductance Gfs (max / Min)
16 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
18 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
18
Rds(on), Max, Tj=25°c, (?)
0.4
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
50
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
360
Rthjc, Max, (ºc/w)
0.35
Package Style
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXFH18N60P
Manufacturer:
IXYS
Quantity:
6 000
Part Number:
IXFH18N60P
Manufacturer:
IXYS
Quantity:
15 500
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
F
Note 1: Pulse test, t ≤ 300 μs, duty cycled ≤ 2 %
S
SM
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
d(on)
r
d(off)
f
rr
PLUS220SMD (IXFV_S) Outline
fs
RM
SD
one or moreof the following U.S. patents:
iss
oss
rss
thJC
thCS
g(on)
gs
gd
RM
Test Conditions
V
V
V
R
V
(TO-247, PLUS220)
Test Conditions
V
Repetitive
I
I
V
F
S
GS
R
DS
GS
GS
G
GS
= I
= 18 A, -di/dt = 100 A/μs
= 100 V, V
= 0 V
= 20 V; I
= 10 V, V
= 5 Ω (External)
= 10 V, V
S
= 0 V, V
, V
GS
= 0 V, Note 1
D
DS
DS
DS
GS
= 0.5 I
= 25 V, f = 1 MHz
4,850,072
4,881,106
= 0.5 V
= 0.5 V
= 0 V
D25
, Note 1
DSS
DSS
4,931,844
5,017,508
5,034,796
, I
, I
D
D
(T
= I
= 0.5 I
(T
J
J
D25
= 25°C, unless otherwise specified)
= 25°C unless otherwise specified)
5,049,961
5,063,307
5,187,117
D25
Min.
Min.
5,237,481
5,381,025
5,486,715
Characteristic Values
Characteristic Values
9
2500
Typ. Max.
Typ. Max.
0.21
280
0.8
62
6,162,665
6,259,123 B1
6,306,728 B1
16
23
21
22
22
50
15
18
5
0.35
200
1.5
18
54
°C/W
°C/W
IXFV 18N60P IXFV 18N60PS
6,404,065 B1
6,534,343
6,583,505
nC
nC
nC
μC
pF
pF
pF
ns
ns
ns
ns
ns
S
A
A
V
A
TO-247 (IXFH) Outline
PLUS220 (IXFV) Outline
6,710,463
6,683,344
6,710,405B2
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
S
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
6.15 BSC
Min.
Millimeter
4.7
2.2
2.2
1.0
1
3 - Source
.4
6,727,585
6,759,692
6,771,478 B2
2
21.46
16.26
20.32
IXFH 18N60P
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
0.205 0.225
0.232 0.252
2 - Drain
Tab - Drain
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
242 BSC
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216

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