STB200N4F3 STMicroelectronics, STB200N4F3 Datasheet

MOSFET N-CH 40V 120A D2PAK

STB200N4F3

Manufacturer Part Number
STB200N4F3
Description
MOSFET N-CH 40V 120A D2PAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STB200N4F3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4 mOhm @ 80A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
75nC @ 10V
Input Capacitance (ciss) @ Vds
5100pF @ 25V
Power - Max
300W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Continuous Drain Current Id
60A
Drain Source Voltage Vds
40V
On Resistance Rds(on)
2.5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0031 Ohms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
120 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STB200N4F3
Manufacturer:
ST
Quantity:
12 500
Part Number:
STB200N4F3
Manufacturer:
ST
0
Part Number:
STB200N4F3T4
Manufacturer:
ST
0
Features
Application
Description
This STripFET™ III Power MOSFET technology
is among the latest improvements, which have
been especially tailored to minimize on-state
resistance providing superior switching
performances.
Table 1.
June 2009
STB200N4F3
STP200N4F3
100 % avalanche tested
Standard threshold drive
Switching applications
Automotive
Type
STB200N4F3
STP200N4F3
Order code
Device summary
V
40 V
40 V
DSS
R
<0.0031 Ω
<0.0035 Ω
DS(on)
N-channel 40 V, 0.0025 Ω , 120 A, D
max
200N4F3
200N4F3
Marking
120 A 300 W
120 A 300 W
I
D
Doc ID 13302 Rev 3
P
w
planar STripFET™ Power MOSFET
Figure 1.
Package
TO-220
D²PAK
D²PAK
Internal schematic diagram
1
3
STB200N4F3
STP200N4F3
2
PAK, TO-220
Tape and reel
Packaging
TO-220
Tube
1
www.st.com
2
3
1/14
14

Related parts for STB200N4F3

STB200N4F3 Summary of contents

Page 1

... Order code STB200N4F3 STP200N4F3 June 2009 planar STripFET™ Power MOSFET max 120 A 300 W 120 A 300 W Figure 1. Marking 200N4F3 200N4F3 Doc ID 13302 Rev 3 STP200N4F3 STB200N4F3 2 PAK, TO-220 3 1 TO-220 D²PAK Internal schematic diagram Package Packaging D²PAK Tape and reel TO-220 Tube 1/14 www ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/ Doc ID 13302 Rev 3 STB200N4F3, STP200N4F3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STB200N4F3, STP200N4F3 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage DS V Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor (3) E Single pulse avalanche energy AS (4) dv/dt Peak diode recovery voltage slope ...

Page 4

... Max rating Max rating @125 ° ± D²PAK TO-220 Parameter Test conditions MHz (see Figure 14) Doc ID 13302 Rev 3 STB200N4F3, STP200N4F3 Min. Typ. Max ± = 250 µ 0.0025 0.0031 0.0030 0.0035 Min. Typ. Max 200 D 5100 - 1270 37 = 120 Unit V 10 µA 100 µ ...

Page 5

... STB200N4F3, STP200N4F3 Table 6. Switching times Symbol t Turn-on delay time d(on) t Rise time r t Off-voltage rise time d(off) t Fall time f Table 7. Source drain diode Symbol I Source-drain current SD I Source-drain current (pulsed) SDM V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized B VDSS 6/14 Figure 3. Figure 5. vs. temperature Figure 7. Doc ID 13302 Rev 3 STB200N4F3, STP200N4F3 Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STB200N4F3, STP200N4F3 Figure 8. Gate charge vs. gate-source voltage Figure 10. Normalized gate threshold voltage vs. temperature Figure 12. Source-drain diode forward characteristics Figure 9. Capacitance variations Figure 11. Normalized on resistance vs. temperature Doc ID 13302 Rev 3 Electrical characteristics 7/14 ...

Page 8

... Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/14 Figure 14. Gate charge test circuit Figure 16. Unclamped inductive load test circuit Figure 18. Switching time waveform Doc ID 13302 Rev 3 STB200N4F3, STP200N4F3 ...

Page 9

... STB200N4F3, STP200N4F3 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK trademark. Doc ID 13302 Rev 3 Package mechanical data ® ...

Page 10

... Package mechanical data Dim 10/14 D2PAK (TO-263) mechanical data m m Min Typ Max ° 0 ° 8 0079457_M Doc ID 13302 Rev 3 STB200N4F3, STP200N4F3 Min Typ Max ° 0 ° 8 ...

Page 11

... STB200N4F3, STP200N4F3 Dim L20 L30 P Q TO-220 mechanical data mm Min Typ Max 4.40 4.60 0.61 0.88 1.14 1.70 0.48 0.70 15.25 15.75 1.27 10 10.40 2.40 2.70 4.95 5.15 1.23 1.32 6.20 6.60 2.40 2. 3.50 3.93 16.40 28.90 3.75 3.85 2.65 2.95 ...

Page 12

... MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.933 0.956 Doc ID 13302 Rev 3 STB200N4F3, STP200N4F3 REEL MECHANICAL DATA mm inch DIM. MIN. MAX. MIN. MAX. A 330 12.992 B 1.5 ...

Page 13

... STB200N4F3, STP200N4F3 6 Revision history Table 8. Document revision history Date 02-Mar-2007 02-Oct-2007 23-Jun-2009 Revision 1 First release 2 Added TO-220 package 3 Updated R limits in DS(on) Doc ID 13302 Rev 3 Revision history Changes Table 4 Figure 7 and 13/14 ...

Page 14

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 14/14 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 13302 Rev 3 STB200N4F3, STP200N4F3 ...

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