IXTV18N60P IXYS, IXTV18N60P Datasheet - Page 4

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IXTV18N60P

Manufacturer Part Number
IXTV18N60P
Description
MOSFET N-CH 600V 18A PLUS220
Manufacturer
IXYS
Series
PolarHV™r
Datasheet

Specifications of IXTV18N60P

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
420 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
5.5V @ 250µA
Gate Charge (qg) @ Vgs
49nC @ 10V
Input Capacitance (ciss) @ Vds
2500pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
PLUS-220
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.42 Ohms
Forward Transconductance Gfs (max / Min)
16 s
Drain-source Breakdown Voltage
600 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
18 A
Power Dissipation
360 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
600
Id(cont), Tc=25°c, (a)
18
Rds(on), Max, Tj=25°c, (?)
0.42
Ciss, Typ, (pf)
2500
Qg, Typ, (nc)
49
Trr, Typ, (ns)
500
Pd, (w)
360
Rthjc, Max, (k/w)
0.35
Package Style
PLUS220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXTV18N60PS
Manufacturer:
RENESAS
Quantity:
143
IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
30
27
24
21
18
15
12
60
50
40
30
20
10
10
9
6
3
0
0
3.5
0.4
0
f = 1MHz
0.5
5
4
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
Fig. 9. Source Current vs.
T
Source-To-Drain Voltage
J
10
= 125
T
0.6
J
-40
25
4.5
= 125
V
º
º
V
º
15
C
C
V
C
G S
S D
0.7
º
D S
C
- Volts
- Volts
20
- Volts
5
0.8
25
5.5
T
0.9
J
30
= 25
C rss
C iss
C oss
º
6
C
1
35
6.5
1.1
40
100
27
24
21
18
15
12
10
10
9
6
3
0
1
9
8
7
6
5
4
3
2
1
0
10
0
0
T
R
J
IXTV 18N60P IXTV 18N60PS
T
T
V
I
I
DS(on)
= -40
D
G
J
C
3
125
DS
5
= 150ºC
= 9A
= 10mA
25
= 25ºC
Fig. 8. Transconductance
º
= 300V
º
º
10
C
6
C
Limit
C
Fig. 10. Gate Charge
Fig. 12. Forw ard-Bias
Safe Operating Area
Q
15
9
G
I
D
- nanoCoulombs
V
12
20
- Amperes
D S
DC
100
15
- Volts
25
18
30
IXTQ 18N60P
21
35
24
40
27
45
100µs
1ms
10ms
25µs
1000
30
50

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