STB21N65M5 STMicroelectronics, STB21N65M5 Datasheet - Page 6
![MOSFET N-CH 650V 17A D2PAK](/photos/29/5/290510/d2pak_sml.jpg)
STB21N65M5
Manufacturer Part Number
STB21N65M5
Description
MOSFET N-CH 650V 17A D2PAK
Manufacturer
STMicroelectronics
Series
MDmesh™r
Datasheet
1.STB21N65M5.pdf
(18 pages)
Specifications of STB21N65M5
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
190 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
50nC @ 10V
Input Capacitance (ciss) @ Vds
1950pF @ 100V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.19 Ohm
Drain-source Breakdown Voltage
650 V
Continuous Drain Current
10.7 A, 17 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Gate Charge Qg
50 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-10562-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
STB21N65M5
Manufacturer:
STM
Quantity:
3 139
Electrical characteristics
2.1
6/18
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220,
D²PAK, I²PAK
Safe operating area for TO-220FP
Safe operating area for TO-247
1
1
1
10
10
10
Tc=25°C
Tc=25°C
Tj=150°C
Tj=150°C
Sinlge
pulse
Sinlge
pulse
Tj=150°C
Tc=25°C
Sinlge
pulse
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 15427 Rev 3
100µs
100µs
100µs
10µs
1ms
10ms
10µs
1ms
10ms
10µs
1ms
10ms
AM05490v1
AM05491v1
AM05492v1
1µs
1µs
1µs
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
D²PAK, I²PAK
Thermal impedance for TO-220FP
Thermal impedance for TO-247
STB/F/I/P/W21N65M5