STP14NM50N STMicroelectronics, STP14NM50N Datasheet - Page 3

• Manufacturer Part Number: STP14NM50N
• Description: MOSFET N-CH 500V 12A TO-220
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STP14NM50N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 320 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 816pF @ 50V
• Power - Max: 90W
• Mounting Type: Through Hole
• Package / Case: TO-220
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 12A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 0.28ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Power: RoHS Compliant
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.9 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: 2 V
• Continuous Drain Current: 12 A
• Power Dissipation: 90 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Gate Charge Qg: 42 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10650-5

STB14NM50N, STD14NM50N, STF14NM50N, STP14NM50N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Table 4.
R
Symbol
Symbol
R
Symbol
R
dv/dt
thj-pcb
I
thj-case
DM
P
thj-amb
V
E
V
V
T
I
SD
T
AR
I
I
TOT
T
ISO
AS
GS
DS
stg
D
D
l
j
(2)
(3)
≤ 2 A, di/dt ≤ 400 A/s,V
(1)
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; T
Storage temperature
Max. operating junction temperature
Absolute maximum ratings
Thermal data
Avalanche data
C
j
= 25°C, I
= 25 °C)
Parameter
DS
Parameter
peak ≤ V
D
Parameter
C
Doc ID 16832 Rev 4
= I
= 25 °C
GS
j
AR
max)
, V
= 0)
(BR)DSS
DD
C
C
= 25 °C
= 100 °C
= 50 V)
, V
DD
= 80% V
TO-220
62.5
300
(BR)DSS
TO-220, D
DPAK D²PAK TO-220FP
1.39
DPAK
50
12
48
90
8
- 55 to 150
Value
2
Value
PAK
± 25
500
150
15
30
Value
172
5.5
Electrical ratings
TO-220FP
12
2500
48
62.5
8
300
25
5
(1)
(1)
(1)
°C/W
°C/W
°C/W
Unit
Unit
V/ns
Unit
mJ
°C
°C
°C
W
A
V
A
A
A
V
V
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